Complementary Transistors. NTE2428 Datasheet

NTE2428 Transistors. Datasheet pdf. Equivalent

Part NTE2428
Description Silicon Complementary Transistors
Feature NTE2428 (NPN) & NTE2429 (PNP) Silicon Complementary Transistors General Purpose Switch Description: .
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Datasheet
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NTE2428
NTE2428 (NPN) & NTE2429 (PNP)
Silicon Complementary Transistors
General Purpose Switch
Description:
The NTE2428 and NTE2429 are silicon complementary transistors in a SOT–89 type surface mount
package designed for use in thick and thin film circuits. Typical applications include telephone and
general industrial.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
DC Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
Thermal Resistance, Junction–to–Tab, RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.
Electrical Characteristics: (TJ = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
ICBO VCB = 60V, IE = 0
VCB = 60V, IE = 0, TJ = +150°C
V(BR)CEO IC = 10mA, IB = 0
V(BR)CES IC = 10µA, VBE = 0
V(BR)EBO IE = 10µA, IC = 0
VCE(sat) IC = 150mA, IB = 15mA, Note 2
IC = 500mA, IB = 50mA, Note 2
VBE(sat) IC = 150mA, IB = 15mA, Note 2
IC = 500mA, IB = 50mA, Note 2
Note 2. Measured under pulsed conditions.
Min Typ Max Unit
– – 100 nA
– – 50 µA
80 – – V
90 – – V
5––V
– – 250 mV
– – 500 mV
– – 1.0 V
– – 1.2 V



NTE2428
Electrical Characteristics (Cont’d): (TJ = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Current Gain
hFE VCE = 5V, IC = 100µA, Note 2
30
Transition Frequency
Collector Capacitance
NTE2428
VCE = 5V, IC = 100mA, Note 2
100 300
VCE = 5V, IC = 500mA, Note 2
50
fT VCE = 10V, IC = 50mA, f = 35MHz 100
MHz
Cc VCB = 10V, IE = Ie = 0, f = 1MHz
– – 12 pF
NTE2429
– – 20 pF
Emitter Capacitance
NTE2428
Ce VEB = 500mV, IC = Ic = 0, f = 1MHz
90 pF
NTE2429
– – 120 pF
TurnOn Time
NTE2428
ton ICon = 100mA, IBon = IBoff = 5mA – – 250 ns
NTE2429
– – 500 ns
TurnOff Time
NTE2428
toff
– – 1000 ns
NTE2429
– – 650 ns
Note 2. Measured under pulsed conditions.
.059 (1.5)
.174 (4.42)
.067 (1.7)
.015 (0.32)
ECB
.020 (.508)
.059 (1.5)
.118 (3.0)
Bottom View
.096
(2.46)
.161
(4.1)
.041
(1.05)
Min







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