NPN Phototransistors. PNZ108F Datasheet

PNZ108F Phototransistors. Datasheet pdf. Equivalent

Part PNZ108F
Description Silicon NPN Phototransistors
Feature Phototransistors PNZ107F, PNZ108F Silicon NPN Phototransistors PNZ107F Unit : mm ø4.6±0.15 Glass wi.
Manufacture Panasonic Semiconductor
Datasheet
Download PNZ108F Datasheet

Phototransistors PNZ107F, PNZ108F Silicon NPN Phototransist PNZ108F Datasheet
Recommendation Recommendation Datasheet PNZ108F Datasheet




PNZ108F
Phototransistors
PNZ107F, PNZ108F
Silicon NPN Phototransistors
For optical control systems
Features
Flat window design which is suited to optical systems
Wide directional sensitivity for easy use
Fast response : tr = 8 µs (typ.)
Signal mixing capability using base pin (PNZ108F)
TO-18 standard type package
PNZ107F
ø4.6±0.15
Unit : mm
Glass window
2-ø0.45±0.05
2.54±0.25
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
* PNZ108F only
Symbol
VCEO
VCBO*
VECO
VEBO*
IC
PC
Topr
Tstg
Ratings
20
30
3
5
30
150
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
˚C
˚C
21
ø5.75 max.
1: Emitter
2: Collector
PNZ108F
ø4.6±0.15
Unit : mm
Glass window
3-ø0.45±0.05
2.54±0.25
3
21
ø5.75 max.
1: Emitter
2: Base
3: Collector
1



PNZ108F
PNZ107F, PNZ108F
Phototransistors
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)
λP
θ
VCE = 10V
VCE = 10V, L = 100 lx*1
VCE = 10V
Measured from the optical axis to the half power point
0.4
Rise time
tr*2 VCC = 10V, ICE(L) = 5mA
Fall time
tf*2 RL = 100
Collector saturation voltage VCE(sat) ICE(L) = 1mA, L = 1000 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
0.05
900
40
8
9
0.3
max Unit
2 µA
4 mA
nm
deg.
µs
µs
0.6 V
Sig.IN
50
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
PC — Ta
200
160
120
80
40
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
12
Ta = 25˚C
1000 lx
T = 2856K
10
L=
1500 lx
900 lx
800 lx 700 lx
600 lx
8 500 lx
400 lx
6
300 lx
4 200 lx
2 100 lx
0
0 4 8 12 16
Collector to emitter voltage
50 lx
10 lx
20 24
VCE (V)
10 2
10
1
10 –1
10 –2
1
ICE(L) — L
VCE = 10V
Ta = 25˚C
T = 2856K
10 10 2
Illuminance L (lx)
10 3
2





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