Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Description
BB101M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-504 1st. Edition Features
Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
Outline
MPAK-4
2
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