Deflection Transistor. 2SC5521 Datasheet

2SC5521 Transistor. Datasheet pdf. Equivalent

2SC5521 Datasheet
Recommendation 2SC5521 Datasheet
Part 2SC5521
Description Horizontal Deflection Transistor
Feature 2SC5521; New Horizontal Deflection Transistor Series for TV s Overview Based on accumulated manufacturing te.
Manufacture Panasonic
Datasheet
Download 2SC5521 Datasheet





Panasonic 2SC5521
New
Horizontal Deflection Transistor Series for TV
s Overview
Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance
and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe-
operation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced
features contribute to higher performing, more reliable home-use TVs that cost less.
s Features
q Withstands ultrahigh voltage : 1500V/1600V/1700V/1800V/2000V
q Low loss:VCE(sat)<3V
mq Broad area of safe-operation.
.cos Spacifications
UParameter
t4Part No.
e2SC5657
2SC5622/2SC5572
e2SC5518/2SC5523
h2SC5514/2SC5521
S2SC5517/2SC5522
ta2SC5519/2SC5524
2SC5516/2SC5584
a2SC5546
.D2SC5553/2SC5597
2SC5591/2SC5591A
www2SC5686
Package
Now
Compact
packaging
TOP-3E Possible
TOP-3E/3D Possible
TOP-3E/3D Possible
TOP-3E/3D Possible
TOP-3E/3D Possible
TOP-3E/3D Possible
TOP-3E/3L
TOP-3E
TOP-3E/3L
TOP-3E
TOP-3E
Electric Characteristics
Ic
(A)
VCBO
(V)
Damper diode
4
6
1500
7
Built-in
13 Not built-in
6
1600/1700
8
Built-in
20 1500
18
1700
22
Not built-in
20 1700/1800
20 2000
Recommended condition
fH
(kHz)
Screen size
(inch)
to 14
15.75
to 25
to 29
32 to 32
15.75
to 29
to 36
32 to 36
64 to 36
oms Applications
.cqTVs qWide-screen TVs qDigital TVs
.DataSheet4U¦ The products and specifications are subject to change without any notice. Please ask for the latest product standards to guarantee the satisfaction of your product requirements.
wSemiconductor Company, Matsushita Electronics Corporation
ww1 Kotari Yakemachi, Nagaokakyo, Kyoto, 617-8520 Japan Tel. (075) 951-8151
http://www.mec.panasonic.co.jp
E00065BE
New publication, effective from Sep 12 2000.



Panasonic 2SC5521
Horizontal Deflection Output Transistor
2SC5514
s Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Collector to base voltage VCBO
1500
V
Collector to emitter voltage VCES
1500
V
Collector to emitter voltage VCEO
600
V
Emitter to base voltage
Peak collector current
VEBO
ICP
7
23*3
V
A
Collector current
IC
13
A
Base current
Collector power dissipation
Junction temperature
IB
PC
Tj
6
50*1
3.0*2
150
A
W
°C
Storage temperature
Tstg
-55 to +150
°C
*1)TC=25°C *2)Ta=25°C (Without heat sink)
*3)Non-repetitive peak collector current.
s Electrical Characteristics(TC=25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
ICBO
VCB=1000V,IE=0
VCB=1500V,IE=0
Emitter cutoff current
IEBO
VEB=7V,IC=0
Forward current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation voltage
fFE
VCE(sat)
VBE(sat)
VCE=5V,IC=6.5A
IC=6.5A,IB=1.63A
IC=6.5A,IB=1.63A
Transition frequency
fT VCE=10V,IC=0.1A,f=0.5MHz
Fall time
Tf IC=6.5A,IB1=1.63A,IB2=-3.25A
Storage time
Tstg IC=6.5A,IB1=1.63A,IB2=-3.25A
15.5±0.5
φ3.2±0.1
Unit:mm
3.0±0.3
5° 5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
TOP-3E
min typ max Unit
- - 50 µA
- - 1 mA
- - 50 µA
5- 9
- - 3V
- - 1.5 V
-3
- MHz
- - 0.2 µs
- - 2.7 µs



Panasonic 2SC5521
Horizontal Deflection Output Transistor
2SC5516
s Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Collector to base voltage VCBO
1500
V
Collector to emitter voltage VCES
1500
V
Collector to emitter voltage VCEO
600
V
Emitter to base voltage VEBO
7
V
Peak collector current
ICP
30*3
A
Collector current
IC
20
A
Base current
Collector power dissipation
Junction temperature
Storage temperature
IB
PC
Tj
Tstg
8
70*1
3.5*2
150
-55 to +150
A
W
°C
°C
*1)TC=25°C *2)Ta=25°C (Without heat sink)
*3)Non-repetitive peak collector current.
s Electrical Characteristics(TC=25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
ICBO
VCB=1000V,IE=0
VCB=1500V,IE=0
Emitter cutoff current
IEBO
VEB=7V,IC=0
Forward current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation voltage
fFE
VCE(sat)
VBE(sat)
VCE=5V,IC=10A
IC=10A,IB=2.5A
IC=10A,IB=2.5A
Transition frequency
fT VCE=10V,IC=0A,f=0.5MHz
Fall time
Tf IC=10A,IB1=2.5A,IB2=-5.0A
Storage time
Tstg IC=10A,IB1=2.5A,IB2=-5.0A
15.5±0.5
φ3.2±0.1
Unit:mm
3.0±0.3
5° 5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
TOP-3E
min typ max Unit
- - 50 µA
- - 1 mA
- - 50 µA
7 - 14
- - 3V
- - 1.5 V
-3
- MHz
- - 0.2 µs
- - 2.7 µs





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