BIPOLAR TRANSISTOR. IRG4PH50S Datasheet

IRG4PH50S TRANSISTOR. Datasheet pdf. Equivalent

Part IRG4PH50S
Description INSULATED GATE BIPOLAR TRANSISTOR
Feature PD -91712A IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum s.
Manufacture IRF
Datasheet
Download IRG4PH50S Datasheet



IRG4PH50S
PD -91712A
IRG4PH50S
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
G
E
n-channel
Standard Speed IGBT
VCES =1200V
VCE(on) typ. = 1.47V
@VGE = 15V, IC = 33A
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche EnergyS
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
1200
57
33
114
114
±20
270
200
80
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
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Typ.
–––
0.24
–––
6.0 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
7/7/2000



IRG4PH50S
IRG4PH50S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage 1200
Emitter-to-Collector Breakdown Voltage T 18
Temperature Coeff. of Breakdown Voltage
1.22
1.47
1.7
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0 A
VGE = 0V, IC = 2.0 mA
IC = 33A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance U
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
1.75 V IC = 57A
See Fig.2, 5
1.55
IC = 33A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-11 mV/°C VCE = VGE, IC = 250µA
27 40 S VCE = 100V, IC = 33A
— — 250 µ A VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 1200V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
167 251
IC = 33A
25 38 nC VCC = 400V
See Fig. 8
55 83
32
VGE = 15V
29 ns TJ = 25°C
845 1268
IC = 33A, VCC = 960V
425 638
VGE = 15V, RG = 5.0
1.80
Energy losses include "tail"
19.6 mJ See Fig. 9, 10, 14
21.4 44
32
30
1170
1000
TJ = 150°C,
ns IC = 33A, VCC = 960V
VGE = 15V, RG = 5.0
Energy losses include "tail"
37 mJ See Fig. 10,11,14
13 nH Measured 5mm from package
3600
160
VGE = 0V
pF VCC = 30V
See Fig. 7
30
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
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