IRG4PH50S Datasheet (data sheet) PDF





IRG4PH50S Datasheet, INSULATED GATE BIPOLAR TRANSISTOR

IRG4PH50S   IRG4PH50S  

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PD -91712A IRG4PH50S INSULATED GATE BIP OLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltag e and low operating frequencies ( < 1kH z) • Generation 4 IGBT design provide s tighter parameter distribution and hi gher efficiency than Generation 3 • I ndustry standard TO-247AC package C St andard Speed IGBT VCES =1200V G E VCE( on) typ. = 1.47V @VGE = 15V, IC = 33A n-channel Benefits • Generation 4 IGB T's offer highest efficiency available • IGBT's optimized for specified appl ication conditions • Designed to be a "drop-in" replacement for equivalent i ndustry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings

IRG4PH50S Datasheet, INSULATED GATE BIPOLAR TRANSISTOR

IRG4PH50S   IRG4PH50S  
Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25° C PD @ TC = 100°C TJ TSTG Collector-to -Emitter Voltage Continuous Collector C urrent Continuous Collector Current Pul sed Collector CurrentQ Clamped Inductiv e Load Current R Gate-to-Emitter Voltag e Reverse Voltage Avalanche EnergyS Max imum Power Dissipation Maximum Power Di ssipation Operating Junction and Storag e Temperature Range Soldering Temperatu re, for 10 sec. Mounting torque, 6-32 o r M3 screw. Max. 1200 57 33 114 114 ± 20 270 200 80 -55 to +150 300 (0.063 in . (1.6mm) from case) 10 lbf•in (1.1N m) Units V A V mJ W °C Thermal R esistance Parameter RθJC RθCS RθJA W t Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, ty pical socket mount Weight Typ. –– 0.24 ––– 6.0 (0.21) Max. 0.64 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 7/7/2000 IRG4PH50 S Electrical Characteristics @ TJ = 25 C (unless otherwise specified) V(BR)CE S V(BR)ECS Parameter Min. Typ. Collecto r-to-Emitter Breakdown Voltage 1200 — Emitter-to-Collector Breakdown Voltage T 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.22 1.47 Collector-to-Emitter Saturation Voltage — 1.75 VCE(ON) — 1.55 VGE( th) Gate Threshold Voltage 3.0 — DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage — -11 gfe Forward Tr








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