MRF544 Datasheet - Microsemi Corporation





MRF544 Datasheet - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF544   MRF544  

Datasheet: MRF544 datasheet

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Description: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 1 8936-1013 PHONE: (215) 631-9840 FAX: (2 15) 631-9855 MRF544 RF & MICROWAVE DIS CRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, high Freque ncy, high breakdown, To-39 packaged, Tr ansistor Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz High Collector Base Breakdown Voltage - BVCBO = 100 V (min) High FT - 1400 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Designed primarily for use in high freq uency and medium and high resolution co lor video display monitors as well as o ther applications requiring high breakd own characteristics. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCB O VEBO IC Parameter Collector-Emitter Voltage


Manufacture Part Number Description

Microsemi Corporation

MRF544

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS




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