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POWER TRANSISTOR. BD949 Datasheet

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POWER TRANSISTOR. BD949 Datasheet






BD949 TRANSISTOR. Datasheet pdf. Equivalent




BD949 TRANSISTOR. Datasheet pdf. Equivalent





Part

BD949

Description

NPN PLASTIC POWER TRANSISTOR

Manufacture

CDIL

Datasheet
Download BD949 Datasheet


CDIL BD949

BD949; Continental Device India Limited An IS/I SO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package IS/ISO 9002 Li c# QSC/L- 000019.2 IS / IECQC 700000 I S / IECQC 750100 BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949 , 951, 953, 955 BD950, 952, 954, 956 N PN PLASTIC POWER TRANSISTORS PNP PLASTI C POWER TRANSISTORS Power Amplifier an d Switching Applic.


CDIL BD949

ations PIN CONFIGURATION 1. BASE 2. COLL ECTOR 3. EMITTER 4. COLLECTOR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O MIN . 14.42 9.63 3.56 MAX. N L O 1 2 3 D G J M 16.51 10.67 4 .83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2. 03 2.92 31.24 DEG 7 A O ABSOLUTE MAX IMUM RATINGS Collector-base voltage (op en emitter) VCBO C.


CDIL BD949

ollector-emitter voltage (open base) VCE O Collector current IC Total power diss ipation up to Tmb = 25°C Ptot Junction temperature Tj Collector-emitter satur ation voltage VCEsat IC = 2 A; IB = 0.2 A D.C. current gain hFE IC = 2 A; VCE = 4 V RATINGS (at TA=25°C unless other wise specified) Limiting values Collect or-base voltage (open emitter) Collecto r-emitter voltage (o.



Part

BD949

Description

NPN PLASTIC POWER TRANSISTOR

Manufacture

CDIL

Datasheet
Download BD949 Datasheet




 BD949
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
IS/ISO 9002
IS / IECQC 700000
Lic# QSC/L- 000019.2 IS / IECQC 750100
BD949, BD951, BD953, BD955
BD950, BD952, BD954, BD956
BD949, 951, 953, 955 NPN PLASTIC POWER TRANSISTORS
BD950, 952, 954, 956 PNP PLASTIC POWER TRANSISTORS
Power Amplifier and Switching Applications
BF
C
E
12 3
D
G
J
M
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
DIM MIN . MAX.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J 0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
O DEG 7
4
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
VCBO
Collector-emitter voltage (open base)
VCEO
Collector current
IC
Total power dissipation up to Tmb = 25°C Ptot
Junction temperature
Tj
Collector-emitter saturation voltage
IC = 2 A; IB = 0.2 A
D.C. current gain
VCEsat
IC = 2 A; VCE = 4 V
hFE
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
VCBO
VCEO
VEBO
IC
949
950
max. 60
max. 60
max.
max.
max.
951 953
952 954
80 100
80 100
5.0
40
150
955
956
120
120
V
V
A
W
°C
max.
1.0
V
min.
20
949
950
max. 60
max. 60
max.
max.
951 953
952 954
80 100
80 100
5.0
5.0
955
956
120
120
V
V
V
A
Continental Device India Limited
Data Sheet
Page 1 of 3





 BD949
BD949, BD951, BD953, BD955
BD950, BD952, BD954, BD956
Collector current (Peak value)
Total power dissipation upto Tmb=25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to ambient
From junction to mounting base
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = VCBO
IE = 0; VCB = ½ VCBO; Tj = 150°C
IB = 0; VCE = ½ VCEO
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 1 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 2 A; IB = 0.2 A
Base emitter on voltage
IC = 2 A; VCE = 4 V
D.C. current gain
IC = 0.5 A; VCE = 4 V
IC = 2 A; VCE = 4 V
Transition frequency
IC = 0.5 A; VCE = 4 V; f = 1 MHz
ICM max.
Ptot max.
Tj max.
Tstg
Rth j–a
Rth j–mb
8.0
40
150
–65 to +150
A
W
°C
°C
7 0 K /W
3.12 K /W
949 951 953 955
950 952 954 956
ICBO
ICBO
ICEO
max.
max.
max.
50
1.0
0.1
µA
mA
mA
IEBO
max.
VCEO
VCBO
VEBO
min. 60
min. 60
min.
VCEsat* max.
VBE(on)* max.
0.2 mA
80 100 120
80 100 120
5.0
V
V
V
1.0 V
1.4 V
hFE* min.
hFE* min.
40
20
fT min.
3
MHz
Switching time
VCC = 20 V; IC = 1 A
Icon = 1A; IBon = –IBoff = 0.1A
RL = 20
Turn on time
NPN
Turn off time
NPN
PNP
PNP
ton typ.
toff typ.
ton typ.
toff typ.
0.3
1.5
0.1
0.4
µs
µs
µs
µs
* Measured under pulse conditions: tp 300µs; duty cycle 2%
Continental Device India Limited
Data Sheet
Page 2 of 3





 BD949
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3



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