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IRFP140A

Advanced Power MOSFET

Description

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.) Ο IRFP140A BVDSS = 100 V RDS(on) = 0.052 Ω ID = 31 A TO-3P 1 2 3 1.Gate 2. Drain 3. So...

Fairchild Semiconductor

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