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2SB1110 Datasheet, Equivalent, PNP Transistor.PNP Transistor PNP Transistor |
　
　
　
| Part | 2SB1110 |
|---|---|
| Description | PNP Transistor |
| Feature | 2SB1109, 2SB1110
Silicon PNP Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SD16 09 and 2SD1610
Outline
TO-126 MOD
123
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collecto r to emitter voltage Emitter to base vo ltage Collector current Collector power dissipation Junction temperature Stora ge temperature
Symbol VCBO VCEO VEBO I C PC Tj Tstg
1. Emitter 2. Collector 3 . Base Ratings 2SB1109 –160 –160 â €“5 –100 1. 25 150 –45 to +150 2SB1 110 –200 –200 –5 –100 1. 25 150 –45 to +150 Unit V V V mA W °C °C 2SB1109, 2SB1110 Electrical Charact . |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
| Part | 2SB1110 |
|---|---|
| Description | PNP Transistor |
| Feature | 2SB1109, 2SB1110
Silicon PNP Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SD16 09 and 2SD1610
Outline
TO-126 MOD
123
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collecto r to emitter voltage Emitter to base vo ltage Collector current Collector power dissipation Junction temperature Stora ge temperature
Symbol VCBO VCEO VEBO I C PC Tj Tstg
1. Emitter 2. Collector 3 . Base Ratings 2SB1109 –160 –160 â €“5 –100 1. 25 150 –45 to +150 2SB1 110 –200 –200 –5 –100 1. 25 150 –45 to +150 Unit V V V mA W °C °C 2SB1109, 2SB1110 Electrical Charact . |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
　
　
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