N-Channel MOSFET. 2N60B Datasheet

2N60B MOSFET. Datasheet pdf. Equivalent


Fairchild Semiconductor 2N60B
www.DataSheet4U.com
November 2001
SSW2N60B / SSI2N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 2.0A, 600V, RDS(on) = 5.0@VGS = 10 V
• Low gate charge ( typical 12.5 nC)
• Low Crss ( typical 7.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D2-PAK
SSW Series
GDS
I2-PAK
SSI Series
G!
D
!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
SSW2N60B / SSI2N60B
600
2.0
1.3
6.0
± 30
120
2.0
5.4
5.5
3.13
54
0.43
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 2.32 °C/W
-- 40 °C/W
-- 62.5 °C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001


2N60B Datasheet
Recommendation 2N60B Datasheet
Part 2N60B
Description 600V N-Channel MOSFET
Feature 2N60B; www.DataSheet4U.com SSW2N60B / SSI2N60B November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET G.
Manufacture Fairchild Semiconductor
Datasheet
Download 2N60B Datasheet




Fairchild Semiconductor 2N60B
www.DataSheet4U.com
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
600 --
ID = 250 µA, Referenced to 25°C -- 0.65
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
VGS = 10 V, ID = 1.0 A
-- 3.8
VDS = 40 V, ID = 1.0 A (Note 4) -- 2.05
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 380
-- 35
-- 7.6
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V, ID = 2.0 A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 2.0 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
16
50
40
40
12.5
2.2
5.4
--
--
10
100
100
-100
4.0
5.0
--
490
46
9.9
40
110
90
90
17
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 2.0
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 6.0
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.0 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.0 A,
-- 250
dIF / dt = 100 A/µs
(Note 4) -- 1.31
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 55mH, IAS = 2.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 2.0A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001



Fairchild Semiconductor 2N60B
www.DataSheet4U.com
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
100 6.0 V
5.5 V
Bottom: 5.0 V
10-1
10-2
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
18
15
V = 10V
GS
12
V = 20V
GS
9
6
3
Note : T = 25
J
0
0123456
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
C
iss
400
C
oss
200 Notes :
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
100 150oC
10-1
2
25oC
-55oC
Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
100
10-1
0.2
150
25
Notes :
1.
2.
V25G0Sμ=
0V
s Pulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 120V
10 DS
VDS = 300V
8 VDS = 480V
6
4
2
Note : ID = 2.0 A
0
0 2 4 6 8 10 12 14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, November 2001







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