BUZ905P MOSFET Datasheet

BUZ905P Datasheet, PDF, Equivalent


Part Number

BUZ905P

Description

(BUZ905P / BUZ906P) P-CHANNEL POWER MOSFET

Manufacture

ETC

Total Page 3 Pages
Datasheet
Download BUZ905P Datasheet


BUZ905P
MAGNA
TEC
BUZ905P
BUZ906P
MECHANICAL DATA
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
P–CHANNEL
POWER MOSFET
POWER MOSFETS FOR
AUDIO APPLICATIONS
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
123
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
Pin 1 – Gate
TO–247
Pin 2 – Source
5.25 (0.215)
BSC
Pin 3 – Drain
FEATURES
• HIGH SPEED SWITCHING
• P–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• N–CHANNEL ALSO AVAILABLE AS
BUZ900P & BUZ901P
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
VDSX
Drain – Source Voltage
VGSS
Gate – Source Voltage
ID Continuous Drain Current
ID(PK)
Body Drain Diode
PD
Total Power Dissipation
@ Tcase = 25°C
Tstg Storage Temperature Range
Tj Maximum Operating Junction Temperature
RθJC
Thermal Resistance Junction – Case
BUZ905P
-160V
BUZ906P
-200V
±14V
-8A
-8A
125W
–55 to 150°C
150°C
1.0°C/W
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94

BUZ905P
MAGNA
TEC
BUZ905P
BUZ906P
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
BVDSX
BVGSS
VGS(OFF)
VDS(SAT)*
Drain – Source Breakdown Voltage VGS = 10V
ID = -10mA
Gate – Source Breakdown Voltage VDS = 0
Gate – Source Cut–Off Voltage
VDS = -10V
Drain – Source Saturation Voltage VGD = 0
IDSX
Drain – Source Cut–Off Current
VGS = -10V
BUZ905P
BUZ906P
IG = ±100µA
ID = -100mA
ID = -8A
VDS = -160V
BUZ905P
VDS = -200V
BUZ906P
yfs*
Forward Transfer Admittance
VDS = -10V
ID = -3A
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V
f = 1MHz
ton Turn–on Time
VDS = -20V
toff Turn-off Time
ID = -5A
* Pulse Test: Pulse Width = 300µs , Duty Cycle 2%.
Min.
-160
-200
±14
-0.15
0.7
Typ.
Max. Unit
V
V
-1.5 V
-12 V
-10
mA
-10
2S
Min.
Typ.
734
300
26
120
60
Max. Unit
pF
ns
150
125
100
75
50
25
0
0
Derating Chart
25 50 75 100 125 150
TC — CASE TEMPERATURE (˚C)
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94


Features MAGNA TEC 4.69 5.31 1.49 2.49 (0.185) ( 0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.8 19) 21.46 (0.845) BUZ905P BUZ906P MEC HANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET POWER MOSFET S FOR AUDIO APPLICATIONS 3.55 (0.140) 3 .81 (0.150) 4.50 (0.177) M ax. 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113 ) 3.12 (0.123) FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENE RGY RATING • ENHANCEMENT MODE • INT EGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900P & BUZ901P 0. 40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.800) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 (0.21 5) BSC TO–247 Pin 1 – Gate Pin 2 Source Pin 3 – Drain ABSOLUTE MAX IMUM RATINGS (Tcase = 25°C unless othe rwise stated) VDSX Drain – Source Vol tage VGSS ID ID(PK) PD Tstg Tj RθJC Ga te – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Tem.
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