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BUZ90

Siemens Semiconductor Group
Part Number BUZ90
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 90 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ...
Datasheet PDF File BUZ90 PDF File

BUZ90
BUZ90

Overview
BUZ 90 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 90 VDS 600 V ID 4.
5 A RDS(on) 1.
6 Ω Package TO-220 AB Ordering Code C67078-S1321-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4.
5 Unit A ID IDpuls 18 TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 4.
5 8 mJ ID = 4.
5 A, VDD = 50 V, RGS = 25 Ω L = 29 mH, Tj = 25 °C Gate source voltage Power dissipation 320 VGS Ptot ± 20 75 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 1.
67 75 E 55 / 150 / 56 °C K/W 1 07/96 BUZ 90 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source breakdown voltage Values typ.
max.
Unit V(BR)DSS 600 3 0.
1 10 10 1.
5 4 V VGS = 0 V, ID = 0.
25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.
1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 1.
6 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 2.
8 A Semiconductor Group 2 07/96 BUZ 90 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Values typ.
max.
Unit gfs 2.
5 3.
8 780 110 40 - S pF 1050 170 70 ns 20 30 VDS≥ 2 * ID * RDS(on)max, ID = 2.
8 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 2.
6 A R...


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