MRF5812
NPN SILICON RF MICROWAVE TRANSISTOR
DESCRIPTION:
The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
PACKAGE STYLE SO-8
FEATURES:
Low Noise – 2.5 dB @ 500 MHz Ftau – 5.0 GHz @ 10 V, 75 mA Cost Effective SO-8 package
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS 200 mA 30 V 15 V 2.5 V 1.25 W @ TC = 25 °C
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