2SD2095. D2095 Datasheet

D2095 2SD2095. Datasheet pdf. Equivalent

Part D2095
Description 2SD2095
Feature Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2095 DESCRIPTION ¡¤ With TO.
Manufacture HItachi
Datasheet
Download D2095 Datasheet

Product Specification www.jmnic.com Silicon NPN Power Tran D2095 Datasheet
Recommendation Recommendation Datasheet D2095 Datasheet




D2095
Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD2095
DESCRIPTION
With TO-3P(H)IS package
Built-in damper diode
High voltage ,high speed
Low collector saturation voltage
APPLICATIONS
For color TV horizontal output applications
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
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CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
5
2.5
50
150
-55~150
UNIT
V
V
A
A
W
i
Datasheet pdf - http://www.DataSheet4U.net/



D2095
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VEBO
Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat Collector-emitter saturation voltage IC=3.5A; IB=0.8A
VBEsat Emitter-base saturation voltage
IC=3.5A; IB=0.8A
ICBO Collector cut-off current
VCB=500V; IE=0
hFE DC current gain
IC=1A ; VCE=5V
fT Transition frequency
IC=0.1A ; VCE=10V
COB Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
VF Diode forward voltage
tf Fall time
IF=5A
ICP=3.5A ;IB1(end)=0.8A
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www.jmnic.com
2SD2095
MIN TYP. MAX UNIT
5V
3.0 5.0
V
1.5 V
10 A
8
3 MHz
105 pF
1.6 2.0
V
0.5 1.0
s
2
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