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N-channel MOS-FET. K2761 Datasheet

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N-channel MOS-FET. K2761 Datasheet






K2761 MOS-FET. Datasheet pdf. Equivalent




K2761 MOS-FET. Datasheet pdf. Equivalent





Part

K2761

Description

N-channel MOS-FET



Feature


www.DataSheet4U.com 2SK2761-01MR FAP-II S Series N-channel MOS-FET 600V 1Ω 10A 50W > Features High Speed Switch ing Low On-Resistance No Secondary Brea kdown Low Driving Power High Voltage VG S = ± 30V Guarantee Repetitive Avalanc he Rated > Outline Drawing > Applicat ions Switching Regulators UPS DC-DC con verters General Purpose Power Amplifier > Maximum Ratings a.
Manufacture

Fuji Electric

Datasheet
Download K2761 Datasheet


Fuji Electric K2761

K2761; nd Characteristics - Absolute Maximum Ra tings (TC=25°C), unless otherwise spec ified Item Drain-Source-Voltage Contino us Drain Current Pulsed Drain Current G ate-Source-Voltage Repetitive or Non-Re petitive (Tch ≤ 150°C) Avalanche Ene rgy Max. Power Dissipation Operating an d Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 600 10 36 ±.


Fuji Electric K2761

30 10 64,7 50 150 -55 ~ +150 Unit V A A V A mJ W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C ), unless otherwise specified Item Drai n-Source Breakdown-Voltage Gate Threshh old Voltage Zero Gate Voltage Drain Cur rent Gate Source Leakage Current Drain Source On-State Resistance Forward Tran sconductance Input Capacitance Output C apacitance Reverse Tr.


Fuji Electric K2761

ansfer Capacitance Turn-On-Time ton (ton =td(on)+tr) Turn-Off-Time toff (ton=td( off)+tf) Avalanche Capability Diode For ward On-Voltage Reverse Recovery Time R everse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions I D=1mA VGS=0V ID=1mA VDS=VGS VDS=600V Tc h=25°C VGS=0V Tch=.

Part

K2761

Description

N-channel MOS-FET



Feature


www.DataSheet4U.com 2SK2761-01MR FAP-II S Series N-channel MOS-FET 600V 1Ω 10A 50W > Features High Speed Switch ing Low On-Resistance No Secondary Brea kdown Low Driving Power High Voltage VG S = ± 30V Guarantee Repetitive Avalanc he Rated > Outline Drawing > Applicat ions Switching Regulators UPS DC-DC con verters General Purpose Power Amplifier > Maximum Ratings a.
Manufacture

Fuji Electric

Datasheet
Download K2761 Datasheet




 K2761
www.DataSheet4U.com
2SK2761-01MR
FAP-IIS Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
N-channel MOS-FET
600V 1Ω 10A 50W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
600
Continous Drain Current
I D 10
Pulsed Drain Current
I D(puls)
36
Gate-Source-Voltage
V GS
±30
Repetitive or Non-Repetitive (Tch 150°C)
Avalanche Energy
I AR
E AS
10
64,7
Max. Power Dissipation
P D 50
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
A
A
V
A
mJ
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=600V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=4,5A
VGS=10V
Forward Transconductance
g fs ID=5A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
t r ID=10A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=10
I AV L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
600
3,5
3
10
Typ. Max.
4,0
10
0,2
10
0,85
6
1100
170
75
25
70
75
40
4,5
500
1,0
100
1,0
1700
260
120
40
110
120
60
1,0 1,5
500
6,5
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
62,5 °C/W
2,5 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98




 K2761
wwNw.-DcahtaSahneent4eUl.coMmOS-FET
600V 1Ω 10A 50W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK2761-01MR
FAP-IIS Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=4,5A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
1
2
3
VDS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
Tch [°C]
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
4
5
6
ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
7
ID [A]
Typical Gate Charge Characteristic
VGS=f(Qg); ID=10A; Tc=25°C
Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V
8
↑↑
9
VDS [V]
Avalanche Energy Derating
Eas=f(starting Tch); VCC=60V; IAV=10A
10
Qg [nC]
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
12
VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
Starting Tch [°C]
VDS [V]
This specification is subject to change without notice!
t [s]










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