C2770 Datasheet: 2SC2770





C2770 2SC2770 Datasheet

Part Number C2770
Description 2SC2770
Manufacture Fuji Semiconductors
Total Page 3 Pages
PDF Download Download C2770 Datasheet PDF

Features: 2SC2770 FUJI POWER TRANSISTOR TRIPLE D IFFUSED PLANER TYPE BUILDING BLOCK TRAN SISTOR INDUSTRIAL USE POWER SUPPLY Outl ine Drawings Features High voltage, hig h current Easy application for parallel use Excellent cost performance High re liability Item Item Item Applications Motor controls Inverters,choppers Swit ching regulators Maximum ratings and c haracteristic Absolute maximum ratings (Tc=25°C) Symbol Rating VCBO 600 VCEO 600 VCEO(SUS) 450 VEBO 6 DC IC 100 1ms IC 250 DC -IC - DC I B 20 1ms IB 60 one transistor two transistor PC PC 770 - Tj +150 Tstg -40 to +125 200 Viso - Mounting 2 5±5 Terminals M5 : 25±5 Unit V V V V A A A A A W W °C °C g V kg·cm kg· cm JEDEC EIAJ - Equivalent Circuit S chematic Electrical characteristics (T c =25°C unless otherwise specified) S ymbol VCBO VCEO VCEO(SUS) VCEX(SUS) VEB O ICBO IEBO -VCE hFE VCE(Sat) VBE(Sat) ton tstg tf Test Conditions ICBO = 1mA ICEO = 10mA IC = 1A IEBO = 300mA VCBO = 600V VEBO = 6V -IC = 1A IC = 6.

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2SC2770
FUJI POWER TRANSISTOR
TRIPLE DIFFUSED PLANER TYPE
BUILDING BLOCK TRANSISTOR
INDUSTRIAL USE POWER SUPPLY
Outline Drawings
Features
High voltage, high current
Easy application for parallel use
Excellent cost performance
High reliability
Item
Item
Item
Applications
Motor controls
Inverters,choppers
Switching regulators
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C)
Symbol
Rating
VCBO
600
VCEO
600
VCEO(SUS)
450
VEBO
6
DC IC
100
1ms
IC
250
DC -IC
-
DC IB
20
1ms
IB
60
one transistor
two transistor
PC
PC
770
-
Tj +150
Tstg -40 to +125
200
Viso
-
Mounting
25±5
Terminals M5 : 25±5
Unit
V
V
V
V
A
A
A
A
A
W
W
°C
°C
g
V
kg·cm
kg·cm
JEDEC
EIAJ
-
-
Equivalent Circuit Schematic
Electrical characteristics (Tc =25°C unless otherwise specified)
Symbol
VCBO
VCEO
VCEO(SUS)
VCEX(SUS)
VEBO
ICBO
IEBO
-VCE
hFE
VCE(Sat)
VBE(Sat)
ton
tstg
tf
Test Conditions
ICBO = 1mA
ICEO = 10mA
IC = 1A
IEBO = 300mA
VCBO = 600V
VEBO = 6V
-IC = 1A
IC = 60A, VCE = 5V
IC = 100A, IB = 25A
IC = 100A, IB1 = 25A, -IB2 = 2A
RL = 3 Pw = 20µ Duty=<2%
Min.
600
600
450
-
6
3.0
8.0
Typ.
Max.
1.0
300
1.5
2.0
4.0
8.0
3.0
Units
V
V
V
V
mA
mA
V
V
µs
µs
µs
Thermal characteristics
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
Transistor
Diode
with Thermal Compound
Min. Typ.
0.05
Max.
0.13
-
Units
°C/W
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