EFFECT TRANSISTOR. 2SK3230 Datasheet

2SK3230 TRANSISTOR. Datasheet pdf. Equivalent


NEC 2SK3230
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DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3230
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3230 is suitable for converter of ECM.
FEATURES
Compact package
High forward transfer admittance
1000 µS TYP. (IDSS = 100 µA)
1600 µS TYP. (IDSS = 200 µA)
Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER
2SK3230
PACKAGE
SC-89 (TUSM)
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
0.1+–00..015
G
DS
1.0
1.6 ± 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Note1
VDSX
20
V
Gate to Drain Voltage
VGDO –20 V
Drain Current
ID 10 mA
Gate Current
Total Power Dissipation Note2
IG 10 mA
PT 200 mW
Junction Temperature
Tj 125 °C
Storage Temperature
Tstg –55 to +125 °C
Notes 1. VGS = –1.0 V
2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
0.2+–00.1
EQUIVALENT CIRCUIT
Gate
Drain
Source
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15942EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
©
2002


2SK3230 Datasheet
Recommendation 2SK3230 Datasheet
Part 2SK3230
Description N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
Feature 2SK3230; www.DataSheet4U.com DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230 N-CHANNEL SILICON JUNCTIO.
Manufacture NEC
Datasheet
Download 2SK3230 Datasheet




NEC 2SK3230
2SK3230
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
Forward Transfer Admittance
IDSS
VGS(off)
| yfs1 |
VDS = 5.0 V, VGS = 0 V
VDS = 5.0 V, ID = 1.0 µA
VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz
Forward Transfer Admittance
| yfs2 | VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz
Input Capacitance
Ciss VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz
Noise Voltage
NV See Test Circuit
MIN. TYP. MAX. UNIT
40 600 µA
0.1 1.0 V
350 µS
350 µS
7.0 8.0 pF
1.8 3.0 µV
IDSS RANK
MARKING
IDSS
(µA)
J2
40 to 70
J3
60 to 110
J4 J5 J6 J7
90 to 180
150 to 300 200 to 450 300 to 600
NOISE VOLTAGE TEST CIRCUIT
+4.5 V
R = 1 k
JIS A
NV (r.m.s)
C = 10 pF
2 Data Sheet D15942EJ1V0DS



NEC 2SK3230
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF
POWER DISSIPATION
100
80
60
40
20
0
20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1.0
VDS = 5 V
0.8
0.6
0.4
0.2
0.6 0.4 0.2
0
+0.2
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE
DRAIN CURRENT CO-RELATION
10.0
5.0
VDS = 5 V
2.0 |yfs|
1.0
0.5
0.2
0.1
0.05
VGS (off)
0.02
0.01
10
20 50 100 200 500
Zero-Gate Voltage Drain Current - µA
1000
2SK3230
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
40
30
20
10
1.0 0.8 0.6 0.4 0.2 0
0.2 0.4 0.6 0.8 1.0
10
20
30
40
VGS - Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
VDS = 0 V
f = 1.0 MHz
50
20
10
5
2
1
12
5 10 20
50 100
VDS - Drain to Source Voltage - V
Data Sheet D15942EJ1V0DS
3







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