N-Channel Enhancement Mode Field Effect Transistor
Description
CEM3172
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 8.9A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8 D 7 D 6 D 5
5
SO-8 1
1 S 2 S 3 S 4 G
ABSOLUTE MAXIMUM RATINGS
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