POWER DARLINGTONS. BD901 Datasheet

BD901 DARLINGTONS. Datasheet pdf. Equivalent

Part BD901
Description NPN SILICON POWER DARLINGTONS
Feature www.DataSheet4U.com BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for.
Manufacture Bourns Electronic Solutions
Datasheet
Download BD901 Datasheet



BD901
www.DataSheet4U.com
BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
Designed for Complementary Use with
BD896, BD898, BD900 and BD902
70 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum hFE of 750 at 3V, 3A
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Base-emitter voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating free-air temperature range
Operating junction temperature range
Storage temperature range
BD895
BD897
BD899
BD901
BD895
BD897
BD899
BD901
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
TA
Tj
Tstg
VALUE
45
60
80
100
45
60
80
100
5
8
0.3
70
2
-65 to +150
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
W
W
°C
°C
°C
PRODUCT INFORMATION
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1



BD901
BD895, BD897, BD899, BD901
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VCE(sat)
VBE(on)
VF
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IC = 100 mA IB = 0
VCE = 30 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VEB = 5 V
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
VCE = 3 V
IC = 3 A
IB = 12 mA IC = 3 A
VCE = 3 V
IC = 3 A
IF = 8 A
(see Note 3)
TC = 100°C
TC = 100°C
TC = 100°C
TC = 100°C
BD895
BD897
BD899
BD901
BD895
BD897
BD899
BD901
BD895
BD897
BD899
BD901
BD895
BD897
BD899
BD901
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
45
60
80
100
750
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
2
2
2
2
2
2.5
2.5
3.5
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.79 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff Turn-off time
IC = 3 A
VBE(off) = -3.5 V
IB(on) = 12 mA
RL = 10
IB(off) = -12 mA
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1 µs
5 µs
PRODUCT INFORMATION
2
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)