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MOSFET. 2SK3653C Datasheet

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MOSFET. 2SK3653C Datasheet






2SK3653C MOSFET. Datasheet pdf. Equivalent




2SK3653C MOSFET. Datasheet pdf. Equivalent





Part

2SK3653C

Description

MOSFET



Feature


www.DataSheet4U.com DATA SHEET JUNCTIO N FIELD EFFECT TRANSISTOR 2SK3653C N- CHANNEL SILICON JUNCTION FIELD EFFECT T RANSISTOR FOR IMPEDANCE CONVERTER OF EC M DESCRIPTION The 2SK3653C contains a diode and high resistivity between its gates and sources, for achieving short stability package and low noise, the 2S K3653C is especially suitable 1.2 ±0.1 0.2 PACKAGE DRAWI.
Manufacture

NEC

Datasheet
Download 2SK3653C Datasheet


NEC 2SK3653C

2SK3653C; NG (Unit: mm) 0.3 ±0.05 0.13 +0.1 –0. 05 time during power-on. In addition, because of its compact for compact ECMs for audio or mobile devices such as ce llphones. 0.8 ±0.1 3 0 to 0.05 FEA TURES • Low noise: −108.5 dB TYP. ( VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) Containing a diode and high resistivi ty, short stability time is achieved du ring power-on. • Super thin t.


NEC 2SK3653C

hickness package: 3pXSOF (0814) t = 0.37 mm TYP. 0.45 0.45 MAX. 0.4 1.4 ±0. 1 0.2 +0.1 –0 ORDERING INFORMATION PART NUMBER 2SK3653C PACKAGE 3pXSOF (08 14) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = −1 .0 V) Gate to Drain Voltage Drain Curre nt Gate Current Total Power Dissipation Junction Temperature Storage Temperatu re VDSX VGDO ID IG PT Tj.


NEC 2SK3653C

Tstg 20 −20 10 10 100 125 −55 to +1 25 V V mA mA mW °C °C EQUIVALENT CIR CUIT 2 3 1 1: Source 2: Drain 3: Gate Caution Please take care of ESD (Elect ro Static Discharge) when you handle th e device in this document. The informat ion in this document is subject to chan ge without notice. Before using this do cument, please confirm that this is the latest version. Not al.

Part

2SK3653C

Description

MOSFET



Feature


www.DataSheet4U.com DATA SHEET JUNCTIO N FIELD EFFECT TRANSISTOR 2SK3653C N- CHANNEL SILICON JUNCTION FIELD EFFECT T RANSISTOR FOR IMPEDANCE CONVERTER OF EC M DESCRIPTION The 2SK3653C contains a diode and high resistivity between its gates and sources, for achieving short stability package and low noise, the 2S K3653C is especially suitable 1.2 ±0.1 0.2 PACKAGE DRAWI.
Manufacture

NEC

Datasheet
Download 2SK3653C Datasheet




 2SK3653C
www.DataSheet4U.com
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3653C
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3653C contains a diode and high resistivity
between its gates and sources, for achieving short stability
time during power-on. In addition, because of its compact
package and low noise, the 2SK3653C is especially suitable
for compact ECMs for audio or mobile devices such as cell-
phones.
FEATURES
Low noise:
108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
Containing a diode and high resistivity, short stability time is
achieved during power-on.
Super thin thickness package: 3pXSOF (0814)
t = 0.37 mm TYP.
ORDERING INFORMATION
PART NUMBER
2SK3653C
PACKAGE
3pXSOF (0814)
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
0.13
+0.1
–0.05
3 0 to 0.05
21
0.45 0.45
1.4 ±0.1
MAX. 0.4
0.2
+0.1
–0
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 1.0 V)
VDSX
20
Gate to Drain Voltage
VGDO
20
Drain Current
ID 10
Gate Current
IG 10
Total Power Dissipation
PT 100
Junction Temperature
Tj 125
Storage Temperature
Tstg 55 to +125
V
V
mA
mA
mW
°C
°C
EQUIVALENT CIRCUIT
2
3
1: Source
2: Drain
3: Gate
1
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18895EJ1V0DS00 (1st edition)
Date Published August 2007 NS
Printed in Japan
2007




 2SK3653C
2SK3653C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
Forward Transfer Admittance
IDSS
VGS(off)
| yfs1 |
VDS = 2.0 V, VGS = 0 V
VDS = 2.0 V, ID = 1.0 μA
VDS = 2.0 V, ID = 30 μA, f = 1.0 kHz
Input Capacitance
Voltage Gain
| yfs2 |
Ciss
GV
VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz
VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz
VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ,
Noise Voltage
VIN = 10 mV, f = 1 kHz
NV VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ,
A-curve
MIN.
90
300
750
TYP.
200
0.37
480
1300
4.0
1.0
MAX.
430
1.0
UNIT
μA
V
μS
μS
pF
dB
108.5
dB
IDSS CLASSIFICATION
MARKING
EE
IDSS (μA)
90 to 180
EF
150 to 240
EH
210 to 350
EJ
320 to 430
VOLTAGE GAIN TEST CIRCUIT
VDD
RL
Out
C
NOISE VOLTAGE TEST CIRCUIT
VDD
RL
JIS A
NV (r.m.s)
C
2 Data Sheet D18895EJ1V0DS




 2SK3653C
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF POWER DISSIPATION
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
40
30
20
10
0.8 0.6 0.4 0.2
0 0.2 0.4 0.6 0.8
10
20
30
40
VGS - Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
VGS = 0 V
f = 1.0 MHz
2SK3653C
1000
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
800
0.2 V
0.3 V
600
400
200
VGS = 0.2 V
0.1 V
0V
0.1 V
0
0 2 4 6 8 10
VDS - Drain to Source Voltage - V
1600
1400
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2.0 V
1200
1000
800
600
400
200
0
-0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8
VGS - Gate to Source Voltage - V
1
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
10
VDS = 2.0 V
| yfs |
1
VGS(off)
1
1 10 100
VDS - Drain to Source Voltage - V
0.1
10
100 1000
IDSS - Zero Gate Voltage Drain Current - μA
Data Sheet D18895EJ1V0DS
3






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