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POWER MOSFET. 2SK3659 Datasheet

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POWER MOSFET. 2SK3659 Datasheet






2SK3659 MOSFET. Datasheet pdf. Equivalent




2SK3659 MOSFET. Datasheet pdf. Equivalent





Part

2SK3659

Description

SWITCHING N-CHANNEL POWER MOSFET



Feature


www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T he 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristic s, designed for low voltage high curren t applications such as DC/DC converter with synchronous rectifier. ORDERING I NFORMATION PART NU.
Manufacture

NEC

Datasheet
Download 2SK3659 Datasheet


NEC 2SK3659

2SK3659; MBER 2SK3659 PACKAGE Isolated TO-220 FE ATURES •4.5V drive available. •Low on-state resistance, RDS(on)1 = 5.7 m MAX. (VGS = 10 V, ID = 40 A) •Low g ate charge, QG = 32 nC TYP. (VDD = 16 V , VGS = 10 V, ID = 65 A) •Built-in ga te protection diode. •Avalanche capab ility ratings. •Isolated TO-220 packa ge. ABSOLUTE MAXIMUM RATING (TA = 25° C) Drain to source voltage (VGS =.


NEC 2SK3659

0 V) Gate to source voltage (VDS = 0 V) Drain current (DC) (TC = 25°C) Drain current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ± 65 ±260 2.0 25 150 −55 to +150 35 12 2 V V A A W W °C °C A mJ Total powe r dissipation (TA = 25°C) Total power dissipation (TC = 25°C) Channel temper ature Storage temperature Single Avalan che Current Single Avalanche.


NEC 2SK3659

Energy Note2 Note2 IAS EAS Note 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Start ing Tch = 25°C, VDD = 10 V, RG = 25 , VGS = 20 → 0 V The information in this document is subject to change with out notice. Before using this document, please confirm that this is the latest version. Not all devices/types availa ble in every country. Please check with local NEC representative fo.

Part

2SK3659

Description

SWITCHING N-CHANNEL POWER MOSFET



Feature


www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T he 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristic s, designed for low voltage high curren t applications such as DC/DC converter with synchronous rectifier. ORDERING I NFORMATION PART NU.
Manufacture

NEC

Datasheet
Download 2SK3659 Datasheet




 2SK3659
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3659
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3659
Isolated TO-220
FEATURES
4.5V drive available.
Low on-state resistance,
RDS(on)1 = 5.7 mMAX. (VGS = 10 V, ID = 40 A)
Low gate charge,
QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A)
Built-in gate protection diode.
Avalanche capability ratings.
Isolated TO-220 package.
ABSOLUTE MAXIMUM RATING (TA = 25°C)
Drain to source voltage (VGS = 0 V)
Gate to source voltage (VDS = 0 V)
VDSS
VGSS
20
±20
Drain current (DC) (TC = 25°C)
Drain current (pulse) Note1
ID(DC)
ID(pulse)
±65
±260
Total power dissipation (TA = 25°C)
PT1
2.0
Total power dissipation (TC = 25°C)
PT2
25
Channel temperature
Tch 150
Storage temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg 55 to +150
IAS 35
EAS 122
V
V
A
A
W
W
°C
°C
A
mJ
Note 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 10 V, RG = 25 Ω, VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16251EJ2V0DS00 (2nd edition)
Date Published June 2002 NS CP (K)
Printed in Japan
©
2002




 2SK3659
2SK3659
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS VDS = 20 V, VGS = 0 V
IGSS VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 40 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 40 A
RDS(on)2 VGS = 4.5 V, ID = 40 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 40 A
Rise Time
Turn-off Delay Time
Fall Time
tr
td(off)
tf
VGS = 10 V
RG = 10
Total Gate Charge
Gate to Source Charge
QG VDD = 16 V
QGS VGS = 10 V
Gate to Drain Charge
QGD ID = 65 A
Body Diode Forward Voltage
VF(S-D) IF = 65 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 65 A, VGS = 0 V
Qrr di/dt = 100 A/µs
MIN.
1.5
15
TYP.
4.6
7.1
1700
700
250
16
14
50
12
32
6.0
8.3
1.0
45
34
MAX.
10
±10
2.5
5.7
9.9
Unit
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG. RG
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
2 Data Sheet D16251EJ2V0DS




 2SK3659
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(on)
100 Limited
ID(pulse)
PW = 100 µs
1 ms
10 ms
100 ms
2SK3659
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
10 ID(DC)
DC Power Dissipation Limited
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
VDS - Drain to Source Voltage - V
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100 Rth(ch-A) = 62.5°C/W
10 Rth(ch-C) = 5°C/W
1
0.1
0.01
10 µ
100 µ
1m
10 m
100 m
1
PW - Pulse Width - s
Data Sheet D16251EJ2V0DS
10
Single Pulse
100 1000
3






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