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SIGC101T170R3 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SIGC101T170R3
Description IGBT
Feature www.
DataSheet4U.
com SIGC101T170R3 IGBT Chip FEATURES:
• 1700V Trench + Field Stop technology
• low turn-off losse s
• short tail current
• positive t emperature coefficient
• easy paralle ling 3 This chip is used for:
• powe r module C Applications:
• drives G E Chip Type SIGC101T170R3 VCE 1700 V ICn 75A Die Size 10.
03 x 10.
03 mm2 Package sawn on foil Ordering Code Q6 7050A4188-A001 MECHANICAL PARAMETER: R aster size Emitter pad size Gate pad si ze Area total / active Thickness Wafer size Flat position Max.
possible chips p er wafer Passivation frontside Emitter metalization Collector metal .
Manufacture Infineon Technologies
Datasheet
Download SIGC101T170R3 Datasheet
Part SIGC101T170R3
Description IGBT
Feature www.
DataSheet4U.
com SIGC101T170R3 IGBT Chip FEATURES:
• 1700V Trench + Field Stop technology
• low turn-off losse s
• short tail current
• positive t emperature coefficient
• easy paralle ling 3 This chip is used for:
• powe r module C Applications:
• drives G E Chip Type SIGC101T170R3 VCE 1700 V ICn 75A Die Size 10.
03 x 10.
03 mm2 Package sawn on foil Ordering Code Q6 7050A4188-A001 MECHANICAL PARAMETER: R aster size Emitter pad size Gate pad si ze Area total / active Thickness Wafer size Flat position Max.
possible chips p er wafer Passivation frontside Emitter metalization Collector metal .
Manufacture Infineon Technologies
Datasheet
Download SIGC101T170R3 Datasheet

SIGC101T170R3

SIGC101T170R3
SIGC101T170R3

SIGC101T170R3

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