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SIGC101T170R3 Datasheet, Equivalent, IGBT.IGBT IGBT |
| Part | SIGC101T170R3 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC101T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losse s • short tail current • positive t emperature coefficient • easy paralle ling 3 This chip is used for: • powe r module C Applications: • drives G E Chip Type SIGC101T170R3 VCE 1700 V ICn 75A Die Size 10. 03 x 10. 03 mm2 Package sawn on foil Ordering Code Q6 7050A4188-A001 MECHANICAL PARAMETER: R aster size Emitter pad size Gate pad si ze Area total / active Thickness Wafer size Flat position Max. possible chips p er wafer Passivation frontside Emitter metalization Collector metal . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC101T170R3 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC101T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losse s • short tail current • positive t emperature coefficient • easy paralle ling 3 This chip is used for: • powe r module C Applications: • drives G E Chip Type SIGC101T170R3 VCE 1700 V ICn 75A Die Size 10. 03 x 10. 03 mm2 Package sawn on foil Ordering Code Q6 7050A4188-A001 MECHANICAL PARAMETER: R aster size Emitter pad size Gate pad si ze Area total / active Thickness Wafer size Flat position Max. possible chips p er wafer Passivation frontside Emitter metalization Collector metal . |
| Manufacture | Infineon Technologies |
| Datasheet |
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