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SIGC158T120R3 Datasheet, Equivalent, IGBT.IGBT IGBT |
| Part | SIGC158T120R3 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC158T120R3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losse s • short tail current • positive t emperature coefficient • easy paralle ling 3 This chip is used for: • powe r module C Applications: • drives G E Chip Type SIGC158T120R3 VCE ICn Die Size 12. 56 x 12. 56 mm2 Package s awn on foil Ordering Code Q67050A4109- A001 1200V 150A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafe r size Flat position Max. possible chips per wafer Passivation frontside Emitte r metallization Collector me . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC158T120R3 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC158T120R3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losse s • short tail current • positive t emperature coefficient • easy paralle ling 3 This chip is used for: • powe r module C Applications: • drives G E Chip Type SIGC158T120R3 VCE ICn Die Size 12. 56 x 12. 56 mm2 Package s awn on foil Ordering Code Q67050A4109- A001 1200V 150A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafe r size Flat position Max. possible chips per wafer Passivation frontside Emitte r metallization Collector me . |
| Manufacture | Infineon Technologies |
| Datasheet |
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