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SIGC158T120R3 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SIGC158T120R3
Description IGBT
Feature www.
DataSheet4U.
com SIGC158T120R3 IGBT Chip FEATURES:
• 1200V Trench + Field Stop technology
• low turn-off losse s
• short tail current
• positive t emperature coefficient
• easy paralle ling 3 This chip is used for:
• powe r module C Applications:
• drives G E Chip Type SIGC158T120R3 VCE ICn Die Size 12.
56 x 12.
56 mm2 Package s awn on foil Ordering Code Q67050A4109- A001 1200V 150A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafe r size Flat position Max.
possible chips per wafer Passivation frontside Emitte r metallization Collector me .
Manufacture Infineon Technologies
Datasheet
Download SIGC158T120R3 Datasheet
Part SIGC158T120R3
Description IGBT
Feature www.
DataSheet4U.
com SIGC158T120R3 IGBT Chip FEATURES:
• 1200V Trench + Field Stop technology
• low turn-off losse s
• short tail current
• positive t emperature coefficient
• easy paralle ling 3 This chip is used for:
• powe r module C Applications:
• drives G E Chip Type SIGC158T120R3 VCE ICn Die Size 12.
56 x 12.
56 mm2 Package s awn on foil Ordering Code Q67050A4109- A001 1200V 150A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafe r size Flat position Max.
possible chips per wafer Passivation frontside Emitte r metallization Collector me .
Manufacture Infineon Technologies
Datasheet
Download SIGC158T120R3 Datasheet

SIGC158T120R3

SIGC158T120R3
SIGC158T120R3

SIGC158T120R3

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