Device. 2SK3816 Datasheet

2SK3816 Datasheet PDF


Part

2SK3816

Description

N-Channel Silicon MOSFET General-Purpose Switching Device

Manufacture

Sanyo Semicon Device

Page 4 Pages
Datasheet
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2SK3816 Datasheet
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Ordering number : ENN8054
2SK3816
2SK3816
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=20V, L=50µH, IAV=40A
*2 L50µH, single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
60
±20
40
160
1.65
50
150
--55 to +150
60
40
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K3816
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=20A
ID=20A, VGS=10V
ID=20A, VGS=4V
min
60
1.2
16
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
27 S
20 26 m
28 40 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2404QA TS IM TB-00000610 No.8054-1/4

2SK3816 Datasheet
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2093A
10.2
2SK3816
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=40A
VDS=30V, VGS=10V, ID=40A
VDS=30V, VGS=10V, ID=40A
IS=40A, VGS=0
min
Package Dimensions
unit : mm
2090A
Ratings
typ
1780
266
197
16.5
160
160
160
40
6.5
11.5
1.05
max
1.5
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
4.5
1.3
10.2 4.5 1.3
1.2
0.8
123
2.55 2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=20A
RL=1.5
D VOUT
2SK3816
P.G 50S
12
0.8
2.55
3
1.2
2.55
2.55 2.55
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
Unclamped Inductive Test Circuit
50
RG
L
DUT
15V
0V
50
VDD
No.8054-2/4


Features Datasheet pdf www.DataSheet4U.com Ordering number : E NN8054 2SK3816 2SK3816 Features • • • • N-Channel Silicon MOSFE T General-Purpose Switching Device App lications Low ON-resistance. Ultrahigh -speed switching. 4V drive. Motor drive , DC / DC converter. Avalanche resistan ce guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter D rain-to-Source Voltage Gate-to-Source V oltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Ch annel Temperature Storage Temperature A valanche Enargy (Single Pulse) *1 Avala nche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty c ycle≤1% Tc=25°C Conditions Ratings 6 0 ±20 40 160 1.65 50 150 --55 to +150 60 40 Unit V V A A W W °C °C mJ A No te : *1 VDD=20V, L=50µH, IAV=40A *2 L 50µH, single pulse Electrical Chara cteristics at Ta=25°C Parameter Drain- to-Source Breakdown Voltage Zero-Gate V oltage Drain Current Gate-to-Source Lea kage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State .
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