P-Channel MOSFET. AO3401 Datasheet

AO3401 MOSFET. Datasheet pdf. Equivalent


Part AO3401
Description P-Channel MOSFET
Feature AO3401 30V P-Channel MOSFET General Description Product Summary The AO3401 uses advanced trench t.
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AO3401
AO3401
30V P-Channel MOSFET
General Description
Product Summary
The AO3401 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS =-4.5V)
RDS(ON) (at VGS=-2.5V)
-30V
-4.0A
< 50m
< 60m
< 85m
SOT23
Top View
Bottom View
D
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
-30
±12
-4
-3.2
-27
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 6: Feb. 2011
www.aosmd.com
Page 1 of 5



AO3401
AO3401
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=-250µA
VGS=-10V, VDS=5V
VGS=-10V, ID=-4.0A
RDS(ON)
gFS
VSD
IS
ISM
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-3.7A
VGS=-2.5V, ID=-2A
Forward Transconductance
VDS=-5V, ID=-4.0A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Pulsed Body-Diode CurrentB
TJ=55°C
TJ=125°C
-30
-0.5
-27
V
-1
µA
-5
±100 nA
-0.9 -1.3 V
A
41 50
m
62 75
47 60 m
60 85 m
17 S
-0.7 -1
V
-2 A
-27 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
645 pF
80 pF
55 pF
4 7.8 12
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
7 nC
VGS=-10V, VDS=-15V, ID=-4.0A 1.5 nC
Qgd Gate Drain Charge
2.5 nC
tD(on)
Turn-On DelayTime
6.5 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V,
RL=3.75, RGEN=3
3.5 ns
41 ns
tf Turn-Off Fall Time
9 ns
trr Body Diode Reverse Recovery Time IF=-4.0A, dI/dt=100A/µs
11 ns
Qrr Body Diode Reverse Recovery Charge IF=-4.0A, dI/dt=100A/µs
3.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: Feb. 2011
www.aosmd.com
Page 2 of 5







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