2SJ290 FET Datasheet

2SJ290 Datasheet PDF, Equivalent


Part Number

2SJ290

Description

(2SJ280 / 2SJ290) SILICON P-CHANNEL MOS FET

Manufacture

Hitachi Semiconductor

Total Page 8 Pages
Datasheet
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2SJ290
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2SJ280 L , 2SJ280 S
Silicon P Channel MOS FET
Application
High speed power switching
LDPAK
Features
• Low on–resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from
5 V source
• Suitable for Switching regulator, DC – DC
converter
• Avalanche Ratings
1
4
1
2
2, 4 3
3
4
12
3
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS –60 V
———————————————————————————————————————————
Gate to source voltage
VGSS ±20 V
———————————————————————————————————————————
Drain current
ID –30 A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
–120
A
———————————————————————————————————————————
Body–drain diode reverse drain current
IDR
–30 A
———————————————————————————————————————————
Avalanche current
IAP*** –30 A
———————————————————————————————————————————
Avalanche energy
EAR***
77
mJ
———————————————————————————————————————————
Channel dissipation
Pch**
75
W
———————————————————————————————————————————
Channel temperature
Tch 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW 10 µs, duty cycle 1 %
** Value at Tc = 25 °C
*** Value at Tch = 25 °C, Rg 50

2SJ290
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2SJ280 L , 2SJ280 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
voltage
V(BR)DSS –60
— V ID = –10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS ±20
— V IG = ±200 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
— — ±10 µA VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current IDSS
— — –250 µA VDS = –50 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage VGS(off)
–1.0 —
–2.25 V
ID = –1 mA, VDS = –10 V
———————————————————————————————————————————
Static drain to source on state RDS(on)
resistance
— 0.033 0.043 ID = –15 A
VGS = –10 V *
————————————————————————
— 0.045 0.06 ID = –15 A
VGS = –4 V *
———————————————————————————————————————————
Forward transfer admittance |yfs|
17 25 — S ID = –15 A
VDS = –10 V *
———————————————————————————————————————————
Input capacitance
Ciss
3300 —
pF VDS = 10 V
————————————————————————————————
Output capacitance
Coss
1500 —
pF VGS = 0
————————————————————————————————
Reverse transfer capacitance Crss
— 480 — pF f = 1 MHz
———————————————————————————————————————————
Turn–on delay time
td(on)
— 30 — ns ID = –15 A
————————————————————————————————
Rise time
tr — 170 — ns VGS = –10 V
————————————————————————————————
Turn–off delay time
td(off)
— 500 — ns RL = 2
————————————————————————————————
Fall time
tf — 390 — ns
———————————————————————————————————————————
Body–drain diode forward
voltage
VDF
–1.5 —
V IF = –30 A, VGS = 0
———————————————————————————————————————————
Body–drain diode reverse
recovery time
trr
— 200 — ns IF = –30 A, VGS = 0,
diF / dt = 50 A / µs
———————————————————————————————————————————
* Pulse Test


Features www.DataSheet4U.com 2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features • • • • Low on–res istance High speed switching Low drive current 4 V gate drive device can be dr iven from 5 V source • Suitable for S witching regulator, DC – DC converter • Avalanche Ratings 1 1 2, 4 2 3 2 3 1 1. Gate 2. Drain 3. Source 4. Drai n 3 Table 1 Absolute Maximum Ratings ( Ta = 25°C) Item Drain to source voltag e Gate to source voltage Drain current Drain peak current Body–drain diode r everse drain current Avalanche current Avalanche energy Channel dissipation Ch annel temperature Storage temperature S ymbol VDSS VGSS ID ID(pulse)* IDR IAP** * EAR*** Pch** Tch Tstg Ratings –60 20 –30 –120 –30 –30 77 75 150 –55 to +150 Unit V V A A A A mJ W °C °C ——————————— ————————————— ————————————— —————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ————————————————————————————————.
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