2SC5574 Power Transistor Datasheet

2SC5574 Datasheet, PDF, Equivalent


Part Number

2SC5574

Description

Power Transistor

Manufacture

Rohm

Total Page 1 Pages
Datasheet
Download 2SC5574 Datasheet


2SC5574
Transistors
Power Transistor (80V, 4A)
2SC5574
2SC5574
!Features
1) Low saturation voltage.
(Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A)
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25°C)
4) Wide SOA (safe operating area).
5) Complements the 2SA2017.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
80
6
4
6
2
30
150
55 ∼ +150
Unit
V
V
V
A(DC)
A(Pulse) *
W
W(Tc=25°C)
°C
°C
!External dimensions (Units : mm)
10.0
φ 3.2
4.5
2.8
1.2 1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
ROHM : TO-220FN
0.75 2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SC5574
TO-220FN
EFG
500
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
100
80
6
100
Typ.
10
60
Max.
10
10
1
1.5
500
Unit
V
V
V
µA
µA
V
V
MHz
pF
Conditions
IC = 50µA
IC = 25mA
IE = 50µA
VCB = 100V
VEB = 6V
IC/IB = 2A/0.2A
IC/IB = 2A/0.2A
VCE/IC = 4V/1A
VCE = 12V , IE = 0.2A , f = 5MHz
VCB = 10V , IE = 0A , f = 1MHz


Features Transistors Power Transistor (80V, 4A) 2 SC5574 2SC5574 !Features 1) Low satur ation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 2) Excellent DC cur rent gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operatin g area). 5) Complements the 2SA2017. ! Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collec tor-emitter voltage Emitter-base voltag e Collector current Collector power dis sipation Junction temperature Storage t emperature * Single pulse, Pw=100ms Sy mbol VCBO VCEO VEBO IC PC Tj Tstg Limi ts 100 80 6 4 6 2 30 150 −55 ∼ +150 Unit V V V A(DC) A(Pulse) * W W(Tc=25 °C) °C °C !External dimensions (Uni ts : mm) 10.0 φ 3.2 4.5 2.8 15.0 12 .0 8.0 14.0 5.0 1.2 1.3 0.8 2.54 2 .54 (1) (2) (3) (1) (2) (3) ROHM : T O-220FN 0.75 2.6 (1) Base(Gate) (2) C ollector(Drain) (3) Emitter(Source) !P ackaging specifications and hFE Type P ackage hFE Code Basic ordering unit (pi eces) 2SC5574 TO-220FN EFG − 500 !Electrical characteristics (Ta = 25°C.
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