4511GM POWER MOSFET Datasheet

4511GM Datasheet, PDF, Equivalent


Part Number

4511GM

Description

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Total Page 7 Pages
Datasheet
Download 4511GM Datasheet


4511GM
www.DataSheet4U.com
Advanced Power
Electronics Corp.
AP4511GM
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Performance
D2
D2
D2
D1 D2
DD11 D1
Description
SO-8
SO-8
GG22
S2
G1 S2
S1 G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
35V
25mΩ
7A
-35V
40mΩ
-6.1A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
35 -35
±20 ±20
7 -6.1
5.7 -5
30 -30
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
201122041

4511GM
www.DataSheet4U.com
AP4511GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=10V, ID=7A
VDS=35V, VGS=0V
VDS=28V, VGS=0V
VGS=±20V
ID=7A
VDS=28V
VGS=4.5V
VDS=18V
ID=1A
RG=3.3Ω,VGS=10V
RD=18Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
35 - - V
- 0.02 - V/
- 18 25 mΩ
- 29 37 mΩ
1 - 3V
-9-S
- - 1 uA
- - 25 uA
- - ±100 nA
- 11 18 nC
- 3 - nC
- 6 - nC
- 12 - ns
- 7 - ns
- 22 - ns
- 6 - ns
- 830 1330 pF
- 150 - pF
- 110 - pF
- 1.2 1.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=7A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 18 - ns
- 12 - nC


Features www.DataSheet4U.com AP4511GM Pb Free Pl ating Product Advanced Power Electroni cs Corp. ▼ Simple Drive Requirement Low On-resistance ▼ Fast Switching Performance D2 D1 D2 D1 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER M OSFET N-CH BVDSS RDS(ON) ID G2 G2 S2 G 1 S2 S1 G1 S1 35V 25mΩ 7A -35V 40mΩ -6.1A P-CH BVDSS RDS(ON) ID SO-8 SO-8 Description The Advanced Power MOSFET s from APEC provide the designer with t he best combination of fast switching, ruggedized device design, low on-resist ance and costeffectiveness. The SO-8 pa ckage is universally preferred for all commercialindustrial surface mount appl ications and suited for low voltage app lications such as DC/DC converters. G1 D1 D2 G2 S1 S2 Absolute Maximum Rat ings Symbol VDS VGS ID@TA=25℃ ID@TA=7 0℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltag e Continuous Drain Current Continuous D rain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 ±20 7 5.7 30 2.0 0.016 -55 to 150 -55 to 150 P-channel .
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