N-Channel MOSFET. 2SK3842 Datasheet

2SK3842 MOSFET. Datasheet pdf. Equivalent

Part 2SK3842
Description N-Channel MOSFET
Feature 2SK3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3842 Switching Reg.
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3842 Datasheet



2SK3842
2SK3842
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3842
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) =4.6 m(typ.)
High forward transfer admittance: |Yfs| = 93 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
www.DataSheet4U.com
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse(t <= 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
60
60
±20
75
300
125
322
75
12.5
150
55 to150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Rth (ch-c)
1.0 °C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 78 μH, RG = 25 Ω, IAR = 75 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with
caution.
Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
4
1
2
3
1 2006-11-17



2SK3842
2SK3842
Electrical Characteristics (Note 4) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
www.DataSheet4U.com
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = −20 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 38 A
VDS = 10 V, ID = 38 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ ⎯ ±10
⎯ ⎯ 100
60 ⎯ ⎯
35 ⎯ ⎯
2.0 4.0
4.6 5.8
46 93
12400
700
1100
μA
μA
V
V
mΩ
S
pF
Rise time
Switching time
Turn-ON time
Fall time
tr VG1S0 V
0V
ton
tf
ID = 38 A VOUT
18
45
RL = 0.79 Ω
ns
35
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
toff Duty <= 1%, tw = 10 μs VDD ∼− 30 V
Qg
Qgs VDD ∼− 48 V, VGS = 10 V, ID = 75 A
Qgd
200
196
148
48
nC
Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement.
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Continuous drain reverse current (Note 1, Note 5)
Pulse drain reverse current
(Note 1,Note 5)
Continuous drain reverse current (Note 1, Note 5)
Pulse drain reverse current
(Note 1,Note 5)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDR1
IDRP1
IDR2
IDRP2
VDS2F
trr
Qrr
IDR1 = 75 A, VGS = 0 V
IDR = 75 A, VGS = 0 V,
dIDR/dt = 50 A/μs
⎯ ⎯ 75 A
⎯ ⎯ 300 A
⎯⎯ 1 A
⎯⎯ 4 A
⎯ ⎯ −1.7 V
70 ns
77 nC
Note 5: Current flowing between the drain and the S1 pin, when open the S2 pin is left open.
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
Marking
K3842
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)