N-Channel MOSFET. 2SK3843 Datasheet

2SK3843 MOSFET. Datasheet pdf. Equivalent

Part 2SK3843
Description N-Channel MOSFET
Feature 2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII) 2SK3843 Switching Reg.
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3843 Datasheet



2SK3843
2SK3843
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (UMOSIII)
2SK3843
Switching Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 2.7 m(typ.)
z High forward transfer admittance : |Yfs| = 120 S (typ.)
z Low leakage current : IDSS = 10 μA (max) (VDS = 40 V)
www.DataSheetz4U.cEonmhancement mode : Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Drain–source voltage
Drain–gate voltage (RGS = 20 k)
Gate–source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
40
40
±20
75
300
125
542
75
12.5
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Rth (ch–c)
1.0
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 100 µH, IAR = 75 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Handle with care.
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1 2006-09-27



2SK3843
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drain–source breakdown voltage
Gate threshold voltage
Drain–source ON resistance
Forward transfer admittance
www.DataSheet4U.com
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 40 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = 20 V
VDS = 10 V, ID = 1 mA
VGS = 4.5 V, ID = 38 A
VGS = 10 V, ID = 38 A
VDS = 10 V, ID = 38 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
Switching time
Turn–on time
Fall time
Turn–off time
Total gate charge
(gate–source plus gate–drain)
Gate–source charge
Gate–drain (“Miller”) Charge
tr
VGS 10 V
0V
ID = 38 A
VOUT
ton
tf
VDD ∼− 20 V
toff Duty <= 1%, tw = 10 μs
Qg
Qgs VDD 32 V, VGS = 10 V, ID = 75 A
Qgd
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR1 = 75 A, VGS = 0 V
IDR = 75 A, VGS = 0 V
dIDR/dt = 30 A/μs
Marking
K3843
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2SK3843
Min Typ. Max
— — ±10
— — 10
40 — —
15 — —
1.5 — 3.0
— 4.3 8.0
— 2.7 3.5
60 120 —
— 11200 —
— 800 —
— 1350 —
Unit
μA
μA
V
V
m
S
pF
— 12 —
— 40 —
ns
— 65 —
— 260 —
— 210 —
— 150 —
— 60 —
nC
Min Typ. Max Unit
— — 75 A
— — 300 A
— — 1.5 V
— 100 —
ns
— 120 —
nC
2006-09-27





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