N-Channel MOSFET. 2SK3847 Datasheet

2SK3847 MOSFET. Datasheet pdf. Equivalent

Part 2SK3847
Description N-Channel MOSFET
Feature 2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOS III) 2SK3847 Switching Re.
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3847 Datasheet



2SK3847
2SK3847
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (UMOS III)
2SK3847
Switching Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 12 m(typ.)
z High forward transfer admittance : |Yfs| = 36 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 40 V)
www.DataSheetz4U.cEonmhancement mode : Vth = 1.5 to 2.5 V
(VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
40
40
±20
32
96
30
47
32
3
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
4.17
83.3
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 48 μH,
RG = 25 , IAR = 32 A
Note 3: Repetitive rating; pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
2006-09-27



2SK3847
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
www.DataSheet4U.com
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 40 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = 20 V
VDS = 10 V, ID = 1 mA
VGS = 4.5 V, ID = 16 A
VGS = 10 V, ID = 16 A
VDS = 10 V, ID = 16 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
Turnon time
Switching time
Fall time
tr
ton
tf
10 V
VGS
0V
ID = 16 A Output
VDD 20 V
2SK3847
Min Typ. Max Unit
— — ±10 μA
— — 100 μA
40 — —
15 — —
V
1.5 — 2.5
V
— 19 26
m
— 12 16
18 36 —
S
— 1980 —
— 210 —
pF
— 300 —
—7—
— 22 —
ns
— 10 —
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
toff Duty 1%, tw = 10 μs
Qg
Qgs VDD 32 V, VGS = 10 V, ID = 32 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 32 A, VGS = 0 V
IDR = 32 A, VGS = 0 V
dlDR/dt = 50 A/μS
— 60 —
— 40 —
— 28 — nC
— 12 —
Min Typ. Max Unit
— — 32 A
— — 96 A
1.5
V
— 40 — ns
— 24 — nC
Marking
K3847
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead (Pb) – free package or
lead (Pb) – free finish.
2
2006-09-27





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