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Power MOSFET. IRFS730A Datasheet

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Power MOSFET. IRFS730A Datasheet






IRFS730A MOSFET. Datasheet pdf. Equivalent




IRFS730A MOSFET. Datasheet pdf. Equivalent





Part

IRFS730A

Description

Advanced Power MOSFET



Feature


Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Te chnology www.DataSheet4U.com IRFS730A BVDSS = 400 V RDS(on) = 1.0 Ω ID = 3. 9 A TO-220F Lower Input Capacitance Im proved Gate Charge Extended Safe Operat ing Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower RDS(ON) : 0. 765 Ω (Typ.) 1 2 3 1.Gate 2. Drai n 3. Source Absolute M.
Manufacture

Fairchild Semiconductor

Datasheet
Download IRFS730A Datasheet


Fairchild Semiconductor IRFS730A

IRFS730A; aximum Ratings Symbol VDSS ID IDM VGS EA S IAR EAR dv/dt PD TJ , TSTG TL Charact eristic Drain-to-Source Voltage Continu ous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Curren t-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Curre nt Repetitive Avalanche Energy Peak Dio de Recovery dv/dt Total Power Dissipati on (TC=25 C ) Line.


Fairchild Semiconductor IRFS730A

ar Derating Factor Operating Junction an d Storage Temperature Range Maximum Lea d Temp. for Soldering Purposes, 1/8” from case for 5-seconds Ο Ο Ο Value 400 3.9 2.5 1 O Units V A A V mJ A mJ V/ns W W/ C Ο 22 + _ 30 348 3.9 3.8 4.0 38 0.3 - 55 to +150 O 1 O 1 O 3 O 2 Ο C 300 Thermal Resistance Symbo l RθJC RθJA Characteristic Junction-t o-Case Junction-to-Ambient .


Fairchild Semiconductor IRFS730A

Typ. --Max. 3.31 62.5 Units Ο C /W Re v. B ©1999 Fairchild Semiconductor Co rporation IRFS730A Electrical Characte ristics (TC=25 C unless otherwise speci fied) Ο N-CHANNEL POWER MOSFET Symbo l BVDSS ∆ BV/ ∆TJ VGS(th) www.DataS heet4U.com Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Te mp. Coeff. Gate Threshold Voltage Gate- Source Leakage , Forward .

Part

IRFS730A

Description

Advanced Power MOSFET



Feature


Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Te chnology www.DataSheet4U.com IRFS730A BVDSS = 400 V RDS(on) = 1.0 Ω ID = 3. 9 A TO-220F Lower Input Capacitance Im proved Gate Charge Extended Safe Operat ing Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower RDS(ON) : 0. 765 Ω (Typ.) 1 2 3 1.Gate 2. Drai n 3. Source Absolute M.
Manufacture

Fairchild Semiconductor

Datasheet
Download IRFS730A Datasheet




 IRFS730A
Advanced Power MOSFET
FEATURES
www.DataSheet4U.com
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10µA (Max.) @ VDS = 400V
Lower RDS(ON) : 0.765 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
O2
O1
O1
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 ΟC )
Linear Derating Factor
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
IRFS730A
BVDSS = 400 V
RDS(on) = 1.0
ID = 3.9 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
400
3.9
2.5
22
+_ 30
348
3.9
3.8
4.0
38
0.3
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
©1999 Fairchild Semiconductor Corporation
Typ.
--
--
Max.
3.31
62.5
Units
ΟC /W
Rev. B




 IRFS730A
IRFS730A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
www.DataSheet4U.com
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage 400 -- -- V VGS=0V,ID=250 µ A
Breakdown Voltage Temp. Coeff. -- 0.52 -- V/ΟC ID=250 µA See Fig 7
Gate Threshold Voltage
2.0 -- 4.0 V VDS=5V,ID=250 µ A
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
-- -- 100 nA VGS=30V
-- -- -100
VGS=-30V
-- -- 10
VDS=400V
Drain-to-Source Leakage Current -- -- 100 µ A VDS=320V,TC=125ΟC
Static Drain-Source
On-State Resistance
-- -- 1.0 VGS=10V,ID=1.95A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 3.44 -- VDS=50V,ID=1.95A
O4
-- 675 880
-- 95 110 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 43 52
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 15 40
-- 18 50
VDD=200V,ID=5.5A,
-- 62 140 ns RG=12
-- 22 60
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 32 42
-- 4.6 --
-- 16.6 --
VDS=320V,VGS=10V,
nC ID=5.5A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
O1
O4
Min. Typ. Max. Units
Test Condition
-- -- 3.9
Integral reverse pn-diode
A
-- -- 22
in the MOSFET
-- -- 1.5
-- 259 --
-- 1.81 --
V TJ=25ΟC,IS=3.9A,VGS=0V
ns TJ=25ΟC,IF=5.5A
µC diF/dt=100A/ µs
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=40mH, IAS=3.9A, VDD=50V, RG=27, Starting TJ =25oC
O3 ISD <_ 5.5A, di/dt <_ 140A/µs, VDD<_ BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature
©1999 Fairchild Semiconductor Corporation




 IRFS730A
N-CHANNEL
POWER MOSFET
www.DataSheet4U.com
Fig 1. Output Characteristics
VGS
101 Top :
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
2.5
2.0
VGS = 10 V
1.5
1.0
VGS = 20 V
0.5
@ Note : TJ = 25 oC
0.0
0 5 10 15 20 25
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
1000
800 C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
600
400
C oss
200 C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRFS730A
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
10-1
2
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 50 V
DS
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
10-1
0.4
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
0.6 0.8 1.0 1.2
VSD , Source-Drain Voltage [V]
1.4
Fig 6. Gate Charge vs. Gate-Source Voltage
10 VDS = 80 V
VDS = 200 V
VDS = 320 V
5
@ Notes : ID = 5.5 A
0
0 5 10 15 20 25 30 35
QG , Total Gate Charge [nC]
©1999 Fairchild Semiconductor Corporation



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