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IRFS730A Datasheet, Equivalent, Power MOSFET.Advanced Power MOSFET Advanced Power MOSFET |
| Part | IRFS730A |
|---|---|
| Description | Advanced Power MOSFET |
| Feature | Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Te chnology
www. DataSheet4U. com IRFS730A BVDSS = 400 V RDS(on) = 1. 0 Ω ID = 3. 9 A TO-220F Lower Input Capacitance Im proved Gate Charge Extended Safe Operat ing Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 400V Lower RDS(ON) : 0. 765 Ω (Typ. ) 1 2 3 1. Gate 2. Drai n 3. Source Absolute Maximum Ratings S ymbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-t o-Source Voltage Continuous Drain Curre nt (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-t o-Source Voltage Si . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
| Part | IRFS730A |
|---|---|
| Description | Advanced Power MOSFET |
| Feature | Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Te chnology
www. DataSheet4U. com IRFS730A BVDSS = 400 V RDS(on) = 1. 0 Ω ID = 3. 9 A TO-220F Lower Input Capacitance Im proved Gate Charge Extended Safe Operat ing Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 400V Lower RDS(ON) : 0. 765 Ω (Typ. ) 1 2 3 1. Gate 2. Drai n 3. Source Absolute Maximum Ratings S ymbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-t o-Source Voltage Continuous Drain Curre nt (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-t o-Source Voltage Si . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
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