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2SC5902. C5902 Datasheet |
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Power Transistors
2SC5902
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
Unit: mm
■ Features
15.5±0.5 φ 3.2±0.1
5˚
3.0±0.3
5˚
• High breakdown voltage: VCBO ≥ 1 700 V
• Wide safe operation area
• Built-in dumper diode
5˚
(4.0)
5˚
2.0±0.2
5˚
■ Absolute Maximum Ratings TC = 25°C
1.1±0.1
0.7±0.1
/ Parameter
Symbol Rating
Unit
5.45±0.3
e Collector-base voltage (Emitter open) VCBO
1 700
V
pe) Collector-emitter voltage (E-B short) VCES
1 700
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
7
V
sta tinu Base current
IB
3
A
a e cycle iscon Collector current
IC
9
A
life d, d Peak collector current *
ICP
14
A
n u duct type Collector power dissipation
PC
40
W
te tin Pro ed Ta=25°C
3
four ntinu Junction temperature
Tj
150
°C
ing isco Storage temperature
Tstg −55 to +150 °C
in n follow ned d Note) *: Non-repetitive peak collector current
10.9±0.5
5˚
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Internal Connection
C
B
E
Ma iscocontinueindteinncalnucdeestype, pla ■ Electrical Characteristics TC = 25°C ± 3°C
/Dis ma Parameter
Symbol
Conditions
D ance type, Emitter-base voltage (Collector open)
ten ce Forward voltage
Main tenan Collector-base cutoff current (Emitter open)
d main Forward current transfer ratio
(plane Collector-emitter saturation voltage
VEBO
VF
ICBO
hFE
VCE(sat)
IE = 500 mA, IC = 0
IF = 4.5 A
VCB = 1 000 V, IE = 0
VCB = 1 700 V, IE = 0
VCE = 5 V, IC = 4.5 A
IC = 4.5 A, IB = 1.13 A
Min Typ Max Unit
7
V
−2
V
50
µA
1
mA
5
10
3
V
Base-emitter saturation voltage
VBE(sat) IC = 4.5 A, IB = 1.13 A
1.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
3
MHz
Storage time
tstg IC = 4.5 A, Resistance loaded
5.0
µs
Fall time
tf
IB1 = 1.13 A, IB2 = −2.25 A
0.5
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJD00304AED
1
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2SC5902
PC Ta
80
(1) TC = Ta
70
(2) With a 100 × 100 × 2 mm
Al heat sink
(3) Without heat sink
60
50
40
(1)
30
Safe operation area
100
ICP
10
IC
Non repetitive pulse
TC = 25°C
t = 100 µs
t= t=
DC 10 ms 1 ms
1
10−1
Safe operation area (Horizontal operation)
20
fH = 15.75 kHz, TC < 90°C
A.S.O for a single
pulse load caused by
EHT flash over during
15
horizontal operation.
One action of the device must
not use in all areas.
(area A, B and C)
But it is able to use in two areas.
(area A and B or area B and C)
10
A
20
5
10
(2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature Ta (°C)
10−2
10−3
1
10
100
1 000
Collector-emitter voltage VCE (V)
B
C
< 1 mA
0
0
500 1 000 1 500 2 000
Collector-emitter voltage VCE (V)
MaDinistecnoanntincuee/ d (planeMdaminatiennteannacnec/Deitsycpoen,timnuaeindteinncalnucdeestyfpoell,opwlianngefdoudrisPcroondtiuncutelidfetcyypceled,sdtaisgceo.ntinued type)
2
SJD00304AED
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