Plastic-Encapsulated Transistors. 3DD13002 Datasheet

3DD13002 Transistors. Datasheet pdf. Equivalent

Part 3DD13002
Description Plastic-Encapsulated Transistors
Feature Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13002 FEATURES Power .
Manufacture TRANSYS Electronics
Datasheet
Download 3DD13002 Datasheet




3DD13002
Transys
Electronics
LIMITED
TO-251 Plastic-Encapsulated Transistors
3DD13002 TRANSISTOR (NPN)
FEATURES
Power dissipation
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PCM:
1.25 W (Tamb=25)
Collector current
ICM: 1 A
Collector-base voltage
V(BR)CBO:
600 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
TO-251
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
tf
ts
Ic= 100µA, IE=0
Ic=1mA, IB=0
IE= 100µA, IC=0
VCB= 600V, IE=0
VEB= 6V, IC=0
VCE= 10V, IC= 200 mA
VCE= 10V, IC=250 µA
IC=200mA, IB= 40 mA
IC=200mA, IB= 40 mA
VCE=10V, Ic=100mA
f =1MHz
IC=1A, IB1=-IB2=0.2A
VCC=100V
600
400
6
9
5
5
V
V
V
100 µA
100 µA
40
0.8 V
1.1 V
MHz
0.5 µs
2.5 µs
CLASSIFICATION OF hFE(2)
Rank
Range
9-15
15-20
20-25
25-30
30-35
35-40







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