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2N6056

ON Semiconductor
Part Number 2N6056
Manufacturer ON Semiconductor
Description NPN Darlington Silicon Power Transistor
Published Nov 17, 2008
Detailed Description ON Semiconductort NPN Darlington Silicon Power Transistor . . . designed for general–purpose amplifier and low frequenc...
Datasheet PDF File 2N6056 PDF File

2N6056
2N6056


Overview
ON Semiconductort NPN Darlington Silicon Power Transistor .
.
.
designed for general–purpose amplifier and low frequency switching applications.
2N6056 ON Semiconductor Preferred Device • High DC Current Gain — hFE = 3000 (Typ) @ IC = 4.
0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) www.
DataSheet4U.
com • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.
0 Vdc (Max) @ IC = 4.
0 Adc = 3.
0 Vdc (Max) @ IC = 8.
0 Adc • Monolithic Construction with Built–In Base–Emitter Shunt Resistors MAXIMUM RATINGS (1) Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Rating Symbol VCEO VCB VEB IC IB Max 80 80 DARLINGTON 8 AMPERE SILICON POWER TRANSI...



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