2SK3662 MOSFET Datasheet

2SK3662 Datasheet PDF, Equivalent


Part Number

2SK3662

Description

N-Channel MOSFET

Manufacture

Toshiba Semiconductor

Total Page 6 Pages
Datasheet
Download 2SK3662 Datasheet


2SK3662
2SK3662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII)
2SK3662
Switching Regulator, DCDC Converter, Motor Drive
Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 9.4 m(typ.)
High forward transfer admittance: |Yfs| = 55 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
www.DataSheet4U.cEonmhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
(Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
60
60
±20
35
105
35
204
35
3.5
150
55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
3.57
62.5
°C/ W
°C/ W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 227 μH, IAR = 35 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2006-11-17

2SK3662
2SK3662
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
www.DataSheet4U.com
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
Min
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = −20 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 18 A
VGS = 10 V, ID = 18 A
VDS = 10 V, ID = 18 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
60
40
1.3
28
tr 10 V
VGS
ton 0 V
ID = 18 A VOUT
tf
VDD 30 V
toff Duty 1%, tw = 10 μs
Typ.
12.5
9.4
55
5120
300
500
6
Max
±10
100
2.5
19
12.5
19
20
115
Unit
μA
μA
V
V
mΩ
S
pF
ns
Qg
VDD 48 V, VGS = 10 V,
Qgs ID = 35 A
Qgd
91
70 nC
21
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDS2F
trr
Qrr
Test Condition
IDR1 = 35 A, VGS = 0 V
IDR = 35 A, VGS = 0 V,
dIDR/dt = 50 A/μs
Marking
Min Typ. Max Unit
⎯ ⎯ 35 A
⎯ ⎯ 105 A
⎯ ⎯ −1.5 V
60 ns
58 nC
K3662
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17


Features 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII) 2SK3662 Switching Regulator, DC−DC Co nverter, Motor Drive Applications • • Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 55 S (typ .) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm • Enhanc ement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) www.DataSheet4U.com A bsolute Maximum Ratings (Ta = 25°C) Ch aracteristics Drain-source voltage Drai n-gate voltage (RGS = 20 kΩ) Gate-sour ce voltage Drain current DC (Note 1) Sy mbol VDSS VDGR VGSS ID IDP PD EAS IAR ( Note 3) Channel temperature Storage tem perature range EAR Tch Tstg Rating 60 6 0 ±20 35 105 35 204 35 3.5 150 −55 t o 150 Unit V V V A W mJ A mJ °C °C P ulse (Note 1) Drain power dissipation ( Tc = 25°C) Single pulse avalanche ener gy (Note 2) Avalanche current Repetitiv e avalanche energy JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (.
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