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2SK3662 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
　
　
　
| Part | 2SK3662 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | 2SK3662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ï€-MOSII)
2SK3662
Switching Regulator, DC−DC Co nverter, Motor Drive Applications
• â €¢ • Low drain-source ON resistance: RDS (ON) = 9. 4 mΩ (typ. ) High forward transfer admittance: |Yfs| = 55 S (typ . ) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm • Enhanc ement mode : Vth = 1. 3 to 2. 5 V (VDS = 10 V, ID = 1 mA) www. DataSheet4U. com A bsolute Maximum Ratings (Ta = 25°C) Ch aracteristics Drain-source voltage Drai n-gate voltage (RGS = 20 kΩ) Gate-sour ce voltage Drain current DC (Note 1) Sy mbol VDSS VDGR VGSS ID IDP PD . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
| Part | 2SK3662 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | 2SK3662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ï€-MOSII)
2SK3662
Switching Regulator, DC−DC Co nverter, Motor Drive Applications
• â €¢ • Low drain-source ON resistance: RDS (ON) = 9. 4 mΩ (typ. ) High forward transfer admittance: |Yfs| = 55 S (typ . ) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm • Enhanc ement mode : Vth = 1. 3 to 2. 5 V (VDS = 10 V, ID = 1 mA) www. DataSheet4U. com A bsolute Maximum Ratings (Ta = 25°C) Ch aracteristics Drain-source voltage Drai n-gate voltage (RGS = 20 kΩ) Gate-sour ce voltage Drain current DC (Note 1) Sy mbol VDSS VDGR VGSS ID IDP PD . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
　
　
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