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2SK3669 Data Sheet

N-Channel MOSFET

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2SK3669
2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII) 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • • • Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = 100.
2SK3669

Download 2SK3669 Datasheet
2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII) 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • • • Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) Unit: mm • Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR (Note 3) Channel temperature Storage temperature range EAR Tch Tstg Rating 100 100 ±20 10 15 28 20 280 10 2 150 −55 to 150 W mJ A mJ °C °C A Unit V V V Pulse (tw ≤ 10 ms) (Note 1) Pulse (tw ≤ 1 ms) (Note 1) JEDEC JEITA TOSHIBA ― ― 2.



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