2SK3665 MOSFET Datasheet

2SK3665 Datasheet PDF, Equivalent


Part Number

2SK3665

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Panasonic

Total Page 4 Pages
Datasheet
Download 2SK3665 Datasheet


2SK3665
Silicon MOSFET
2SK3665
N-channel enhancement mode MOSFET
High speed switching
20.0±0.5
φ 3.3±0.2
Unit : mm
5.0±0.3
(3.0)
Absolute Maximum Ratings
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Avalanche energy capability *1
Allowable power Tc = 25 °C *2
dissipation
Ta = 25 °C *3
Junction temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
EAS
PD
PD
Tj
Tstg
Rating
200
30
30
120
1800
180
3
150
-55 to +150
Unit
V
V
A
A
mJ
W
W
°C
°C
*1 : Guarantee of single pulse avalanche energy.
(L = 2mH, IL = 30A, VDD = 100V, 1pulse, Ta = 25 °C )
*2 : Tc = 25 °C
*3 : Ta = 25 °C (Without heat sink )
(1.5)
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
(1.5)
2.7±0.3
0.6±0.2
123
TOP-3L
D
G
S
Electrical Characteristics (Tc = 25 ± 3 °C)
Parameter
Symbol
Condition
Min Typ Max Unit
Drain Cutoff Current
IDSS VDS = 160V, VGS = 0
− − 100 µ A
Gate-source Leakage Current
IGSS VGS = ± 30 V, VDS = 0
− − ±1 µA
Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0
200 − − V
Gate Threshold Voltage
Drain-source on Resistance
Forward Transfer Admittance
Vth
RDS (on)
Yfs
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 15 A
VDS = 25 V, ID = 15 A
1.5 3.5 V
50 68 m
8 16 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss VDS = 25 V, VGS = 0,
Crss f = 1MHz
3170
440
35
pF
pF
pF
Turn-on delay time
Rise time
td (on)
36
ns
tr VDD = 100V, ID = 15 A
42
ns
Turn-off delay time
td (off) RL = 6.7 , VGS = 10 V
230
ns
Fall time
tf
50
ns

2SK3665
2SK3665
Electrical Characteristics (Tc = 25 ± 3 °C)
Parameter
Diode forward Voltage
Reverse recovery Time
Reverse recovery Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
Condition
Min Typ Max Unit
VDSF
Trr
Qrr
IDR = 30V, VGS = 0
L = 230 µH, VDD = 100V
IDR = 15 A, di/dt = 100A/µs
-1.5 V
182
ns
819
nC
Qg
VDD = 100 V, ID = 25 A
Qgs VGS = 10 V
Qgd
55
10
16
nC
nC
nC
Thermal characteristics
Thermal resistance
(channel to case)
Thermal resistance
(channel to ambient)
Rth (ch-c)
Rth (ch-a)
− − 0.69 °C/W
− − 41.6 °C/W


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