D2025 Transistors Datasheet

D2025 Datasheet, PDF, Equivalent


Part Number

D2025

Description

Silicon NPN Power Transistors

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download D2025 Datasheet


D2025
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2025
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·DARLINGTON
·Complement to type 2SB1344
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APPLICATIONS
·For low frequency power amplifier and
power driver applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
100
100
7
8
10
2
30
150
-55~150
UNIT
V
V
V
A
A
W

D2025
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2025
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
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V(BR)CBO
Collector-emitter breakdown voltage
Collector-base breakdown voltage
IC=5mA; IB=0
IC=50µA; IE=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA
ICBO Collector cut-off current
VCB=100V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=2A ; VCE=3V
fT Transition frequency
IC=0.2A ; VCE=5V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
100 V
100 V
1.5 V
10 µA
3.0 mA
1000
20000
40 MHz
50 pF
2


Features SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD2025 DESCRIPTION ·With TO-220Fa pac kage ·High DC current gain ·Low satur ation voltage ·DARLINGTON ·Complement to type 2SB1344 www.DataSheet4U.com A PPLICATIONS ·For low frequency power a mplifier and power driver applications PINNING PIN 1 2 3 Base Emitter Collecto r Fig.1 simplified outline (TO-220Fa) a nd symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-bas e voltage Collector current Collector c urrent-peak Ta=25 PC Collector power di ssipation TC=25 Tj Tstg Junction temper ature Storage temperature 30 150 -55~15 0 CONDITIONS Open emitter Open base Ope n collector VALUE 100 100 7 8 10 2 W UN IT V V V A A SavantIC Semiconductor P roduct Specification Silicon NPN Power Transistors 2SD2025 CHARACTERISTICS Tj=25 unless otherwise specified PARAME TER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO www.DataSheet4U.co.
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