2N6039 Transistor Datasheet

2N6039 Datasheet, PDF, Equivalent


Part Number

2N6039

Description

(2N6037 - 2N6039) Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6039 Datasheet


2N6039
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6037 2N6038 2N6039
DESCRIPTION
·With TO-126 package
·Complement to type 2N6034/6035/6036
·DARLINGTON
·High DC current gain
APPLICATIONS
·Designed for general-purpose amplifier
and low-speed switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6037
VCBO
Collector-base voltage 2N6038
2N6039
2N6037
VCEO
Collector-emitter voltage 2N6038
2N6039
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
40
60
80
40
60
80
5
4
8
0.1
40
150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
3.12
UNIT
/W

2N6039
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6037 2N6038 2N6039
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6037
2N6038 IC=0.1A ;IB=0
2N6039
40
60
80
V
VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=8mA
VCEsat-2 Collector-emitter saturation voltage IC=4A; IB=40mA
VBEsat
Base-emitter saturation voltage
IC=4A; IB=40mA
VBE Base-emitter on voltage
IC=2A ; VCE=3V
ICEO Collector cut-off current
ICEX Collector cut-off current
ICBO Collector cut-off current
VCE=Rated VCEO; IB=0
VCE=Rated VCEO; VBE(off)=1.5V
TC=125
VCB=Rated VCBO; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=3V
hFE-2
DC current gain
IC=2A ; VCE=3V
hFE-3
DC current gain
IC=4A ; VCE=3V
COB Output capacitance
IE=0;VCB=10V;f=0.1MHz
500
750
100
2.0 V
3.0 V
4.0 V
2.8 V
0.1 mA
0.1
0.5
mA
0.1 mA
2.0 mA
15000
100 pF
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -126 package ·Complement to type 2N603 4/6035/6036 ·DARLINGTON ·High DC curr ent gain APPLICATIONS ·Designed for ge neral-purpose amplifier and low-speed s witching applications PINNING(see Fig.2 ) PIN 1 2 3 DESCRIPTION Emitter Collect or Base 2N6037 2N6038 2N6039 Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6037 VCBO Collector-base voltage 2N6 038 2N6039 2N6037 VCEO Collector-emitte r voltage 2N6038 2N6039 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collect or current Collector current-peak Base current Total Power Dissipation Junctio n temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 4 8 0.1 40 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j- c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT /W SavantIC S emiconductor www.DataSheet4U.com Product Specification Silicon NPN.
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