2N6031 Transistor Datasheet

2N6031 Datasheet, PDF, Equivalent


Part Number

2N6031

Description

Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6031 Datasheet


2N6031
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2N6031
DESCRIPTION
·With TO-3 package
·Complement to type 2N5631
·High collector sustaining voltage
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For high power audio amplifier and
high voltage switching regulator
circuits applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PD
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-140
-140
-7
-16
-20
-5.0
200
150
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
0.875
UNIT
/W

2N6031
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2N6031
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-10A; IB=-1A
VCEsat-2 Collector-emitter saturation voltage IC=-16A ;IB=-4A
VBEsat Base-emitter saturation voltage
IC=-10A; IB=-1A
-140
V
-1.0 V
-2.0 V
-1.8 V
VBE Base-emitter on voltage
ICBO Collector cut-off current
ICEO Collector cut-off current
ICEX
Collector cut-off current
(VBE(off)=1.5V)
IC=-8A ; VCE=-2V
VCB=ratedVCBO; IE=0
VCE=-70V; IB=0
VCE=ratedVCB
VCE=ratedVCB; TC=150
-1.5 V
-2.0 mA
-2.0 mA
-2.0
mA
-7.0
IEBO Emitter cut-off current
VEB=-7V; IC=0
-5.0 mA
hFE-1
DC current gain
IC=-8A ; VCE=-2V
15 60
hFE-2
DC current gain
IC=-16A ; VCE=-2V
4
COB Output capacitance
fT Transition frequency
IE=0 ; VCB=-10V ;f=0.1MHz
IC=-1A ; VCE=-20V ;f=0.5MHz
1.0
1000 pF
MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO -3 package ·Complement to type 2N5631 ·High collector sustaining voltage ·H igh DC current gain ·Low collector sat uration voltage APPLICATIONS ·For high power audio amplifier and high voltage switching regulator circuits applicati ons PINNING PIN 1 2 3 Base Emitter Coll ector DESCRIPTION 2N6031 Fig.1 simpli fied outline (TO-3) and symbol Absolut e maximum ratings(Ta= ) SYMBOL VCBO VCE O VEBO IC ICM IB PD Tj Tstg PARAMETER C ollector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base cu rrent Total Power Dissipation Junction temperature Storage temperature TC=25 C ONDITIONS Open emitter Open base Open c ollector VALUE -140 -140 -7 -16 -20 -5. 0 200 150 -65~200 UNIT V V V A A A W T HERMAL CHARACTERISTICS SYMBOL Rth j-c P ARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor www.DataSheet4U.com.
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