2N6671 Transistor Datasheet

2N6671 Datasheet, PDF, Equivalent


Part Number

2N6671

Description

(2N6671 - 2N6673) Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6671 Datasheet


2N6671
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6671 2N6672 2N6673
DESCRIPTION
·With TO-3 package
·Low saturation voltage
·Fast switching speed
·High voltage ratings
APPLICATIONS
·Off-line power supplies
·High-voltage inverters
·Switching regulators
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6671
VCBO
Collector-base voltage 2N6672
2N6673
2N6671
VCEO
Collector-emitter voltage 2N6672
2N6673
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
450
550
650
300
350
400
8
8
10
4
150
200
-65~200
UNIT
V
V
V
A
A
A
W

2N6671
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6671 2N6672 2N6673
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6671
2N6672 IC=0.2A ;IB=0
2N6673
VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=1A
VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=4A
VBEsat Base-emitter saturation voltage
IC=5A; IB=1A
2N6671 VCE=450V; VBE(off)=-1.5V
ICEV Collector cut-off current 2N6672 VCE=550V; VBE(off)=-1.5V
2N6673 VCE=650V; VBE(off)=-1.5V
IEBO Emitter cut-off current
VEB=8V; IC=0
hFE DC current gain
IC=5A ; VCE=3V
COB Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
fT Transition frequency
IC=0.2A ; VCE=10V
MIN TYP. MAX UNIT
300
350 V
400
1.0 V
2.0 V
1.6 V
0.1 mA
2.0 mA
10 40
300 pF
15 60 MHz
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.17
UNIT
/W
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -3 package ·Low saturation voltage ·F ast switching speed ·High voltage rati ngs APPLICATIONS ·Off-line power suppl ies ·High-voltage inverters ·Switchin g regulators PINNING PIN 1 2 3 Base Emi tter Collector DESCRIPTION 2N6671 2N66 72 2N6673 Fig.1 simplified outline (TO -3) and symbol Absolute maximum rating s(Ta= ) SYMBOL PARAMETER 2N6671 VCBO Co llector-base voltage 2N6672 2N6673 2N66 71 VCEO Collector-emitter voltage 2N667 2 2N6673 VEBO IC ICM IB PD Tj Tstg Emit ter-base voltage Collector current Coll ector current-peak Base current Total P ower Dissipation Junction temperature S torage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALU E 450 550 650 300 350 400 8 8 10 4 150 200 -65~200 V A A A W V V UNIT SavantI C Semiconductor www.DataSheet4U.com Pr oduct Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER.
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