Power Transistor. 2N6688 Datasheet

2N6688 Transistor. Datasheet pdf. Equivalent


Part 2N6688
Description Silicon Power Transistor
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N.
Manufacture SavantIC
Datasheet
Download 2N6688 Datasheet

SavantIC Semiconductor www.DataSheet4U.com Product Specific 2N6688 Datasheet
2N6688 Datasheet
2N6688 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 2N6688 Datasheet
2N6688 Datasheet
Recommendation Recommendation Datasheet 2N6688 Datasheet




2N6688
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6688
DESCRIPTION
·With TO-3 package
·Fast switching speed
·Low collector saturation voltage
APPLICATIONS
·For power supplies and other high-voltage
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
300
200
8
20
50
8
200
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
0.875
UNIT
/W



2N6688
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCEsat Collector-emitter saturation voltage IC=20A; IB=2A
VBEsat
Base-emitter saturation voltage
IC=20A; IB=2A
ICEV Collector cut-off current
VCE=300V; VBE=-1.5V
IEBO Emitter cut-off current
VEB=8V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=10A ; VCE=2V
hFE-3
DC current gain
fT Transition frequency
IC=20A ; VCE=2V
IC=1A ; VCE=10V
Product Specification
2N6688
MIN TYP. MAX UNIT
200 V
1.5 V
1.8 V
50 µA
100 µA
25
20 80
15
20 100 MHz
2





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