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POWER TRANSISTOR. 2SB1287 Datasheet

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POWER TRANSISTOR. 2SB1287 Datasheet






2SB1287 TRANSISTOR. Datasheet pdf. Equivalent




2SB1287 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SB1287

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2SB1287 DESCRIPTION ·With TO-220Fa package ·High DC curr ent gain ·Low saturation voltage ·Com plement to type 2SD1765 ·DARLINGTON AP PLICATIONS ·For low frequency power am plifier and power driver applications P INNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outlin.
Manufacture

SavantIC

Datasheet
Download 2SB1287 Datasheet


SavantIC 2SB1287

2SB1287; e (TO-220Fa) and symbol DESCRIPTION Abs olute maximum ratings(Ta=25 ) SYMBOL VC BO VCEO VEBO IC ICM PARAMETER Collector -base voltage Collector -emitter voltag e Emitter-base voltage Collector curren t Collector current-peak Ta=25 PC Colle ctor power dissipation TC=25 Tj Tstg Ju nction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open col.


SavantIC 2SB1287

lector VALUE -100 -100 -8 -2 -3 2 W UNIT V V V A A SavantIC Semiconductor www. DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1287 CHARACTERISTICS Tj=25 unless otherwis e specified PARAMETER Collector-emitter breakdown voltage Collector-base break down voltage Collector-emitter saturati on voltage Collector cut-off current Em itter cut-off curr.


SavantIC 2SB1287

ent DC current gain Output capacitance C ONDITIONS IC=-5mA; IB=0 IC=-50µA; IE=0 IC=-1A ;IB=-1mA VCB=-100V; IE=0 VEB=-7 V; IC=0 IC=-1A ; VCE=-2V IE=0 ; VCB=-10 V;f=1MHz 1000 35 MIN -100 -100 -1.5 -10 -3.0 10000 pF TYP. MAX UNIT V V V µA mA SYMBOL V(BR)CEO V(BR)CBO VCEsat ICB O IEBO hFE COB 2 SavantIC Semiconduct or www.DataSheet4U.com Product Specifi cation Silicon PNP .

Part

2SB1287

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2SB1287 DESCRIPTION ·With TO-220Fa package ·High DC curr ent gain ·Low saturation voltage ·Com plement to type 2SD1765 ·DARLINGTON AP PLICATIONS ·For low frequency power am plifier and power driver applications P INNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outlin.
Manufacture

SavantIC

Datasheet
Download 2SB1287 Datasheet




 2SB1287
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SD1765
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier and
power driver applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SB1287
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-100
-100
-8
-2
-3
2
20
150
-55~150
UNIT
V
V
V
A
A
W




 2SB1287
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1287
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-50µA; IE=0
VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA
ICBO Collector cut-off current
VCB=-100V; IE=0
IEBO Emitter cut-off current
VEB=-7V; IC=0
hFE DC current gain
IC=-1A ; VCE=-2V
COB Output capacitance
IE=0 ; VCB=-10V;f=1MHz
MIN TYP. MAX UNIT
-100
V
-100
V
-1.5 V
-10 µA
-3.0 mA
1000
10000
35 pF
2




 2SB1287
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1287
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3



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