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FTD2003

N-Channel Silicon MOS FET

Description

www.DataSheet4U.com FTD2003 N- Channel Silicon MOS FET Very High Speed-Switchng TENTATIVE Features Low ON-state resistance. 2.5V drive. Mount height of 1.1mm. Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation T...

Sanyo Semiconductor Corporation

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