N-Channel MOSFET. AO4800BL Datasheet

AO4800BL MOSFET. Datasheet pdf. Equivalent

Part AO4800BL
Description Dual N-Channel MOSFET
Feature www.DataSheet4U.com AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor Gener.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO4800BL Datasheet



AO4800BL
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AO4800B, AO4800BL
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4800B/L uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in buck
converters. Standard Product AO4800B/L is Pb-free
(meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 27m(VGS = 10V)
RDS(ON) < 32m(VGS = 4.5V)
RDS(ON) < 50m(VGS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested!
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain CurrentB
ID
IDM
TA=25°C
Power Dissipation TA=70°C
Avalanche CurrentB
Repetitive avalanche energy 0.3mHB
PD
IAR
EAR
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
6.9
5.8
40
1.9
1.2
12
22
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-AmbientAF
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
55
90
40
Max
62.5
110
48
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



AO4800BL
AO4800B/L
Ewlwewc.tDriactaaSl hCeheta4rUa.ccotemristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
Forward Transconductance
VDS=5V, ID=5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=4.5V, VDS=15V, ID=8.5A
VGS=10V, VDS=15V, RL=1.8,
RGEN=6
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
Min
30
0.7
40
10
Typ Max Units
0.002
1
1
5
100
1.5
20 27
25 40
23 32
34 50
26
0.71 1
4.5
V
µA
nA
V
A
m
m
m
S
V
A
900 1100
88
65
0.95 1.5
pF
pF
pF
10 12
1.8
3.75
3.2
3.5
21.5
2.7
16.8 20
8 12
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 1 : Dec 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com





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