K1332 Data Sheet PDF | Sanyo Semiconductor Corporation





(Datasheet) K1332 PDF Download

Part Number K1332
Description 2SK1332
Manufacture Sanyo Semiconductor Corporation
Total Page 4 Pages
PDF Download Download K1332 Datasheet PDF

Features: Ordering number:EN3137 N-Channel Juncti on Silicon FET www.DataSheet4U.com 2SK 1332 Low-Frequency General-Purpose Ampl ifier Applications Applications · Ide al for use in variable resistors, analo g switches, low-frequency amplifiers, a nd constant-current circuits. Package Dimensions unit:mm 2058 [2SK1332] 0.425 0.2 0 to 0.1 0.6 0.9 0.3 3 2.1 1.250 Features · Ultrasmall-sized package pe rmitting 2SK1332applied sets to be made smaller and slimmer. 0.15 0.425 1 2 0.65 0.65 2.0 0.3 Specifications Abs olute Maximum Ratings at Ta = 25˚C Par ameter Drain-to-Source Voltage Gate-to- Drain Voltage Gate Current Drain Curren t Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions 1 : Source 2 : Drain 3 : Gate SANYO : M CP Ratings 30 –30 10 20 150 150 –5 5 to +150 Unit V V mA mA mW ˚C ˚C E lectrical Characteristics at Ta = 25˚C Parameter Gate-to-Drain Breakdown Volt age Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff.

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K1332 datasheet
Ordering number:EN3137
www.DataSheet4U.com
N-Channel Junction Silicon FET
2SK1332
Low-Frequency
General-Purpose Amplifier Applications
Applications
· Ideal for use in variable resistors, analog switches,
low-frequency amplifiers, and constant-current
circuits.
Features
· Ultrasmall-sized package permitting 2SK1332-
applied sets to be made smaller and slimmer.
Package Dimensions
unit:mm
2058
[2SK1332]
0.3
3
0.15
0 to 0.1
12
0.65 0.65
2.0
0.3 0.6
0.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=–10µA, VDS=0
Gate-to-Source Leakage Current
IGSS VGS=–20V, VDS=0
Zero-Gate Voltage Drain Current
IDSS VDS=10V, VGS=0V
Cutoff Voltage
VGS(off) VDS=10V, ID=1µA
Forward Transfer Admittance
| yfs | VDS=10V, VGS=0V, f=1kHz
* : The 2SK1332 is classified by IDSS as follows (unit : mA) :
0.6 2 1.5 1.2 3 3.0 2.5 4 6.0
(Note) Marking : V
IDSS rank : 2, 3, 4
• For CP package version, use the 2SK303.
1 : Source
2 : Drain
3 : Gate
SANYO : MCP
Ratings
30
–30
10
20
150
150
–55 to +150
Unit
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ max
Unit
–30 V
–1.0 nA
0.6* 6.0* mA
–0.2 –0.7 –2.5 V
2.5 5.0
mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51099TH (KT)/6089MO, TS No.3137–1/4

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