POWER TRANSISTOR. 2SD1729 Datasheet

2SD1729 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SD1729
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1729 www.datasheet.
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Datasheet
Download 2SD1729 Datasheet



2SD1729
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1729
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPN package
·Built-in damper diode
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current (DC)
ICM Collector current (Pulse)
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
700
7
3.5
10
1.5
60
150
-55~150
UNIT
V
V
V
A
A
A
W



2SD1729
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=500mA; IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.8A
ICBO Collector cut-off current
VCB=750V; IE=0
VCB=1500V; IE=0
hFE DC current gain
IC=0.5A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=10V
VF Diode forward voltage
IF=-3.5A,IB=0
Switching times
ts Storage time
tf Fall time
IC=3A; IB1=0.8A
IB2=-1.6A VCC=200V
Product Specification
2SD1729
MIN TYP. MAX UNIT
7V
8.0 V
1.5 V
10 µA
1 mA
5 25
2 MHz
2.0 V
1.5 µs
0.2 µs
2





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