POWER TRANSISTOR. 2SD1739 Datasheet

2SD1739 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SD1739
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1739 www.datasheet.
Manufacture SavantIC
Datasheet
Download 2SD1739 Datasheet



2SD1739
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1739
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·Wide area of safe operation
·High voltage,high speed
APPLICATIONS
·Horizontal deflection output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IB
PC
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
700
7
6
18
2.5
100
150
-55~150
UNIT
V
V
V
A
A
A
W



2SD1739
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1739
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1.2A
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
ICBO Collector cut-off current
VCB=750V; IE=0
VCB=1500V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=1A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
Switching times
tstg Storage time
tf Fall time
IC=5A; IB1=1A
IB2=-2A; VCC=200V
MIN TYP. MAX UNIT
8.0 V
1.5 V
7V
10 µA
1 mA
10 µA
6 30
2 MHz
1.5 µs
0.2 µs
2





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