POWER TRANSISTOR. BD953 Datasheet

BD953 TRANSISTOR. Datasheet pdf. Equivalent

Part BD953
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD953 www.datasheet4u.
Manufacture SavantIC
Datasheet
Download BD953 Datasheet



BD953
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD953
DESCRIPTION
www.dat·aWshiethet4Tu.Oco-m220C package
·Low collector saturation voltage
·High current capability
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
100
100
7
5
40
150
-50~150
UNIT
V
V
V
A
W



BD953
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD953
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.2A
ICBO Collector cut-off current
VCB=100V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=4V
hFE-2
DC current gain
IC=2A ; VCE=4V
fT Transition frequency
IC=0.5A ; VCE=4V
MIN TYP. MAX UNIT
100 V
7V
1.0 V
1.5 V
50 µA
50 µA
40
20
3 MHz
2





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